18456599. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Ryouichi Kawano of Matsumoto-city (JP)
Motoyoshi Kubouchi of Matsumoto-city (JP)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18456599 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a semiconductor substrate with an insulated gate electrode structure buried in a trench, a base region of a different conductivity type in contact with the trench, a main electrode region at the upper part of the base region, a polysilicon film with higher impurity concentration buried in another trench in contact with the base region, and a second main electrode region on the bottom surface of the substrate.
- Semiconductor substrate with insulated gate electrode structure buried in a trench
- Base region of different conductivity type in contact with the trench
- Main electrode region at the upper part of the base region
- Polysilicon film with higher impurity concentration buried in another trench in contact with the base region
- Second main electrode region on the bottom surface of the substrate
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as power electronics, integrated circuits, and sensors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the design and structure of the components, leading to better functionality and reliability.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, improved reliability, and potential cost savings in semiconductor manufacturing processes.
Potential Commercial Applications
The technology described in this patent application could have commercial applications in industries such as telecommunications, automotive, consumer electronics, and renewable energy, where high-performance semiconductor devices are essential for various applications.
Possible Prior Art
One possible prior art related to this technology could be the development of similar semiconductor devices with buried gate electrode structures and optimized base regions for improved performance and efficiency.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor devices to evaluate the performance and efficiency improvements offered by this technology.
What are the specific manufacturing processes involved in producing these semiconductor devices?
The article does not detail the specific manufacturing processes or techniques used to fabricate the semiconductor devices described in the patent application.
Original Abstract Submitted
A semiconductor device includes: a semiconductor substrate of a first conductivity-type: an insulated gate electrode structure buried in a first trench provided in the semiconductor substrate; a base region of a second conductivity-type provided in the semiconductor substrate so as to be in contact with the first trench; a first main electrode region of the first conductivity-type provided at an upper part of the base region so as to be in contact with the first trench: a polysilicon film of the second conductivity-type having a higher impurity concentration than the base region and buried in a second trench provided in the semiconductor substrate so as to be in contact with the base region; and a second main electrode region provided on a bottom surface side of the semiconductor substrate.
