18455941. THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE EMPLOYING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE EMPLOYING THE SAME
Organization Name
Inventor(s)
Bo-Eun Park of Hwaseong-si (KR)
Jeonggyu Song of Seongnam-si (KR)
THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE EMPLOYING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18455941 titled 'THIN FILM STRUCTURE INCLUDING DIELECTRIC MATERIAL LAYER, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE EMPLOYING THE SAME
Simplified Explanation
The patent application describes a thin film structure consisting of three layers: a first conductive layer, a dielectric material layer, and an upper layer. The dielectric material layer is made of HfAO and meets either of two conditions: it is either formed to a thickness of 5 nm or less, or it has a specific range of composition (x) within HfAO (0.3 to 0.5).
- The thin film structure consists of a first conductive layer, a dielectric material layer, and an upper layer.
- The dielectric material layer is made of HfAO.
- The dielectric material layer satisfies either of two conditions: it is formed to a thickness of 5 nm or less, or it has a composition range of x within HfAO (0.3 to 0.5).
Potential applications of this technology:
- Thin film transistors
- Memory devices
- Solar cells
- Display panels
Problems solved by this technology:
- Improved performance and efficiency of thin film devices
- Enhanced stability and reliability of thin film structures
Benefits of this technology:
- Thinner dielectric material layer allows for miniaturization of devices
- Specific composition range of HfAO improves electrical properties
- Increased performance and efficiency of thin film devices
- Enhanced stability and reliability of thin film structures
Original Abstract Submitted
A thin film structure includes a first conductive layer, a dielectric material layer on the first conductive layer, and an upper layer on the dielectric material layer. The dielectric material layer including HfAOsatisfies at least one of a first condition and a second condition. In the first condition the dielectric material layer is formed to a thickness of 5 nm or less and in the second condition the x in HfAOis in a range of 0.3 to 0.5.
