18454110. IMAGE SENSOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18454110 titled 'IMAGE SENSOR
Simplified Explanation
The image sensor described in the patent application includes a semiconductor substrate with two adjacent pixels, separated by a pixel isolation structure. An anti-reflection layer covers the pixels and the isolation structure, and a through via structure is present in a through via hole in the anti-reflection layer and the substrate.
- The image sensor has a pixel isolation structure to prevent crosstalk between adjacent pixels.
- An anti-reflection layer is used to reduce unwanted reflections and improve image quality.
- The through via structure allows for electrical connections between different layers of the sensor.
- The through via structure includes a first conductive layer and a second conductive layer for efficient signal transmission.
- The materials used in the anti-reflection layer and the conductive layers are carefully chosen for optimal performance.
Potential Applications
- Digital cameras
- Smartphone cameras
- Surveillance cameras
- Medical imaging devices
Problems Solved
- Crosstalk between pixels
- Unwanted reflections in images
- Efficient electrical connections in the sensor
Benefits
- Improved image quality
- Enhanced performance in various imaging devices
- Better signal transmission efficiency
Original Abstract Submitted
Provided is an image sensor including a semiconductor substrate including a first pixel and a second pixel adjacent to the first pixel, a pixel isolation structure between the first pixel and the second pixel, an anti-reflection layer on the first pixel, the second pixel, and the pixel isolation structure, and a through via structure in a through via hole that is in the anti-reflection layer and the semiconductor substrate. The through via structure may include a first conductive layer on an inner wall of the through via hole, and a second conductive layer on the first conductive layer on the inner wall of the through via hole, and the anti-reflection layer may include TiO, and the first conductive layer may include a material having a higher work function than Ti.
