18451862. FILM FORMING METHOD AND ATMOSPHERIC PLASMA FILM FORMING APPARATUS simplified abstract (FUJIFILM Corporation)
Contents
- 1 FILM FORMING METHOD AND ATMOSPHERIC PLASMA FILM FORMING APPARATUS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FILM FORMING METHOD AND ATMOSPHERIC PLASMA FILM FORMING APPARATUS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Abstract
- 1.6 Bullet Points
- 1.7 Potential Applications
- 1.8 Problems Solved
- 1.9 Benefits
- 1.10 Original Abstract Submitted
FILM FORMING METHOD AND ATMOSPHERIC PLASMA FILM FORMING APPARATUS
Organization Name
Inventor(s)
Akihisa Yoshida of Kanagawa (JP)
Yoshihiko Mochizuki of Kanagawa (JP)
FILM FORMING METHOD AND ATMOSPHERIC PLASMA FILM FORMING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18451862 titled 'FILM FORMING METHOD AND ATMOSPHERIC PLASMA FILM FORMING APPARATUS
Simplified Explanation
Abstract
The present invention relates to a film forming method and an atmospheric plasma film forming apparatus that can create a highly flat film at a fast film forming speed using atmospheric plasma film formation. This is achieved by introducing plasma generation gas from an inner side flow passage between a pair of electrodes, introducing raw material gas from either a first outer side flow passage or a second outer side flow passage that pass through the outer side of the electrodes, and adjusting the gas flow rates between the outlet ports of the outer side flow passages and the substrate.
Bullet Points
- Film forming method and apparatus using atmospheric plasma film formation
- Introduces plasma generation gas from an inner side flow passage between electrodes
- Raw material gas introduced from outer side flow passages
- Gas flow rates between outlet ports of outer side flow passages and substrate are adjusted
Potential Applications
- Semiconductor manufacturing: This technology can be used to create high-quality films on semiconductor substrates, improving the performance and reliability of electronic devices.
- Display manufacturing: The film forming method and apparatus can be applied to the production of flat panel displays, ensuring uniformity and high resolution.
- Coating industry: The atmospheric plasma film forming method can be utilized for coating various materials, such as metals, ceramics, and polymers, providing enhanced surface properties and protection.
Problems Solved
- High flatness film formation: The technology addresses the challenge of achieving a highly flat film during atmospheric plasma film formation, which is crucial for many applications.
- Fast film forming speed: The method and apparatus enable high-speed film formation, reducing production time and increasing efficiency.
- Control of gas flow rates: By adjusting the gas flow rates between the outer side flow passages and the substrate, the technology ensures precise control over the film formation process.
Benefits
- Improved film quality: The film forming method and apparatus result in films with high flatness, uniformity, and quality, meeting the requirements of various industries.
- Increased production efficiency: The fast film forming speed allows for higher throughput and shorter production cycles, leading to improved productivity.
- Enhanced process control: The ability to adjust gas flow rates provides better control over the film formation process, enabling customization and optimization for specific applications.
Original Abstract Submitted
An object of the present invention is to provide a film forming method and an atmospheric plasma film forming apparatus capable of forming a film having high flatness at a high film forming speed by using atmospheric plasma film formation. The object is achieved by introducing plasma generation gas from an inner side flow passage that passes between a pair of electrodes, by introducing raw material gas from at least one of a first outer side flow passage or a second outer side flow passage that pass through an outer side of the pair of electrodes, and by making a gas flow rate between an outlet port of the first outer side flow passage and a substrate and a gas flow rate between an outlet port of the second outer side flow passage and the substrate unequal.
