18450865. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

Nam Jae Lee of Icheon-si Gyeonggi-do (KR)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18450865 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device and its manufacturing method. The device includes a stack structure, a source structure, a channel structure, and a first memory layer.

  • The semiconductor device has a stack structure, source structure, channel structure, and a first memory layer.
  • The source structure includes a protrusion part between the first memory layer and the channel structure.
  • The channel structure penetrates the stack structure and is connected to the source structure.

Potential applications of this technology:

  • This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
  • It can be utilized in memory storage devices, processors, and other integrated circuits.

Problems solved by this technology:

  • The inclusion of the first memory layer improves the performance and functionality of the semiconductor device.
  • The protrusion part in the source structure enhances the connection between the first memory layer and the channel structure.

Benefits of this technology:

  • The stack structure and source structure provide a compact and efficient design for the semiconductor device.
  • The improved connection between the first memory layer and the channel structure enhances the overall performance and reliability of the device.


Original Abstract Submitted

There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure; a source structure; a channel structure penetrating the stack structure, the channel structure being connected to the source structure; and a first memory layer interposed between the channel structure and the stack structure. The source structure includes a first protrusion part protruding between the first memory layer and the channel structure.

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