18450664. Method of Transferring Patterned Micro-LED Die onto a Silicon Carrier for Wafer-to-Wafer Hybrid Bonding to a CMOS Backplane simplified abstract (Apple Inc.)
Contents
- 1 Method of Transferring Patterned Micro-LED Die onto a Silicon Carrier for Wafer-to-Wafer Hybrid Bonding to a CMOS Backplane
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Method of Transferring Patterned Micro-LED Die onto a Silicon Carrier for Wafer-to-Wafer Hybrid Bonding to a CMOS Backplane - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
Method of Transferring Patterned Micro-LED Die onto a Silicon Carrier for Wafer-to-Wafer Hybrid Bonding to a CMOS Backplane
Organization Name
Inventor(s)
Justin S. Brockman of Palo Alto CA (US)
Dmitry S. Sizov of Cupertino CA (US)
Lei Zhang of Albuquerque NM (US)
Method of Transferring Patterned Micro-LED Die onto a Silicon Carrier for Wafer-to-Wafer Hybrid Bonding to a CMOS Backplane - A simplified explanation of the abstract
This abstract first appeared for US patent application 18450664 titled 'Method of Transferring Patterned Micro-LED Die onto a Silicon Carrier for Wafer-to-Wafer Hybrid Bonding to a CMOS Backplane
Simplified Explanation
The patent application describes optoelectronic structures and methods of formation, including a backplane with driving circuitry and contact pads, a device layer with micro-sized diodes and landing pads, and a reconstituted wiring layer with via contacts connected to the landing pads. The layers are directly bonded with metal-metal bonds, allowing for decoupling of the placement distribution of landing pads from the position distribution of via contacts.
- Optoelectronic structure with backplane, device layer, and reconstituted wiring layer
- Direct bonding with metal-metal bonds
- Decoupling of placement distribution of landing pads and position distribution of via contacts
Potential Applications
This technology could be applied in:
- Optoelectronic devices
- Integrated circuits
- Display technologies
Problems Solved
This technology helps to address issues related to:
- Efficient bonding of optoelectronic structures
- Simplified manufacturing processes
- Improved performance of optoelectronic devices
Benefits
The benefits of this technology include:
- Enhanced reliability and durability
- Increased efficiency in optoelectronic device production
- Improved overall performance of optoelectronic structures
Potential Commercial Applications
Potential commercial applications of this technology include:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be:
- Traditional optoelectronic structures with separate wiring layers and bonding methods
Unanswered Questions
How does this technology compare to existing optoelectronic bonding methods?
This article does not provide a direct comparison to existing optoelectronic bonding methods.
What are the specific materials used in the metal-metal bonds for this technology?
The article does not specify the exact materials used in the metal-metal bonds for this technology.
Original Abstract Submitted
Optoelectronic structures and methods of formation are described. In an embodiment, an optoelectronic structure includes a backplane with a driving circuitry and an array of contact pads, and a device layer bonded to the backplane. The device layer may include an array of micro-sized diodes and landing pads, and a reconstituted wiring layer including an array of via contacts connected to the array of landing pads. The reconstituted wiring layer can be directly bonded with the array of contacts with metal-metal bonds. A placement distribution of the array of landing can be decoupled from a position distribution of the array of via contacts.
