18450625. PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (Kioxia Corporation)

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PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Organization Name

Kioxia Corporation

Inventor(s)

Toshiyuki Sasaki of Yokkaichi Mie (JP)

PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18450625 titled 'PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Simplified Explanation

The abstract describes a plasma processing device with multiple direct current power supplies that operate independently to apply different voltages.

  • The device includes a chamber, direct current power supplies, and a controller.
  • The power supplies are located in the upper portion and on a side wall of the chamber.
  • Each power supply can operate individually, applying direct current voltages independently.
  • The controller controls the power supplies to apply different voltages as needed.

Potential Applications

This technology could be used in semiconductor manufacturing, surface treatment processes, and thin film deposition.

Problems Solved

This device allows for more precise control over plasma processing, leading to improved quality and efficiency in various industrial applications.

Benefits

The independent operation of the direct current power supplies enables tailored processing conditions for different materials and applications, resulting in better outcomes.

Potential Commercial Applications

"Advanced Plasma Processing Device for Industrial Applications"

Possible Prior Art

There may be prior art related to plasma processing devices with multiple power supplies, but specific examples are not provided in the abstract.

Unanswered Questions

How does this technology compare to existing plasma processing devices in terms of efficiency and cost-effectiveness?

The abstract does not provide information on the comparative advantages of this device over existing technologies.

Are there any limitations or challenges associated with the implementation of this technology in industrial settings?

The abstract does not address any potential drawbacks or obstacles that may arise when using this plasma processing device in real-world applications.


Original Abstract Submitted

A plasma processing device includes a chamber, a plurality of direct current power supplies, and a controller. The direct current power supplies are provided in an upper portion and on a side wall of the chamber, wherein the direct current power supplies are configured to operate individually. The controller is configured to control the direct current power supplies such that the direct current power supplies apply respective direct current voltages independent of each other.