18450187. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Kioxia Corporation)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
- 1.11 What specific metal elements are commonly used in amorphous layers in semiconductor devices?
- 1.12 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Ryosuke Umino of Kuwana Mie (JP)
Daisuke Ikeno of Yokkaichi Mie (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18450187 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a stacked film structure with electrode layers, insulating films, a charge storage layer, and a semiconductor layer. One of the electrode layers contains an amorphous layer made of a metal element and silicon.
- The semiconductor device features a stacked film structure with alternating electrode layers and insulating films.
- A charge storage layer is located on the side surfaces of the electrode layers through a second insulating film.
- A semiconductor layer is positioned on the side surface of the charge storage layer via a third insulating film.
- At least one electrode layer includes a first electrode layer that is an amorphous layer composed of a metal element and silicon.
Potential Applications
This technology could be applied in:
- Memory devices
- Semiconductor manufacturing
- Integrated circuits
Problems Solved
This innovation addresses issues related to:
- Improving semiconductor device performance
- Enhancing memory storage capabilities
- Increasing efficiency in semiconductor manufacturing processes
Benefits
The benefits of this technology include:
- Higher performance in semiconductor devices
- Enhanced memory storage capacity
- Improved overall efficiency in manufacturing processes
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Electronics industry
- Semiconductor manufacturing companies
- Memory storage device manufacturers
Possible Prior Art
One possible prior art for this technology could be the use of similar stacked film structures in semiconductor devices in the past.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research and testing would be needed to determine the specific advantages of this technology over current solutions.
What specific metal elements are commonly used in amorphous layers in semiconductor devices?
The abstract mentions the use of a metal element in the amorphous layer of the semiconductor device, but it does not specify which metal elements are commonly used for this purpose. Further investigation into common metal elements used in semiconductor devices would be necessary to fully understand this aspect of the technology.
Original Abstract Submitted
A semiconductor device includes: a stacked film alternately including a plurality of electrode layers and a plurality of first insulating films; a charge storage layer provided on the side surfaces of the electrode layers via a second insulating film; and a semiconductor layer provided on the side surface of the charge storage layer via a third insulating film. At least one electrode layer of the plurality of electrode layers includes a first electrode layer which is an amorphous layer comprising a metal element and silicon.
