18448615. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18448615 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes cell lower conductive lines, peripheral lower conductive lines, lower electrode contacts, peripheral conductive contacts, and variable resistance patterns. Here is a simplified explanation of the patent application:
- Cell lower conductive lines and peripheral lower conductive lines are placed on a substrate.
- Lower electrode contacts are located on the cell lower conductive lines.
- Peripheral conductive contacts are situated on the peripheral lower conductive lines.
- Variable resistance patterns are spaced horizontally apart on the lower electrode contacts.
- The lower electrode contacts are connected to the variable resistance patterns.
- Peripheral conductive lines are spaced horizontally apart from the variable resistance patterns on the peripheral conductive contacts.
- The peripheral conductive contacts are connected to the peripheral conductive lines.
- The cell and peripheral lower conductive lines are connected to the lower electrode contacts and the peripheral conductive contacts, respectively.
- The cell and peripheral lower conductive lines are at the same height.
- The pitch of the cell lower conductive lines directly adjacent to each other is greater than the pitch of the peripheral lower conductive lines directly adjacent to each other.
Potential Applications
This technology could be applied in the development of advanced memory devices, such as resistive random-access memory (RRAM) or memristors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the layout and connectivity of the components.
Benefits
The benefits of this technology include enhanced data storage capabilities, increased speed, and reduced power consumption in electronic devices.
Potential Commercial Applications
- "Enhancing Memory Devices with Innovative Layout Design"
Possible Prior Art
There may be prior art related to the optimization of layout designs in semiconductor devices to improve performance and efficiency.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and power consumption?
This article does not provide a direct comparison between this technology and existing memory devices.
What are the specific materials used in the variable resistance patterns and how do they contribute to the overall performance of the semiconductor device?
The article does not delve into the specific materials used in the variable resistance patterns and their impact on performance.
Original Abstract Submitted
A semiconductor device includes cell lower conductive lines and peripheral lower conductive lines on a substrate, lower electrode contacts on the cell lower conductive lines, peripheral conductive contacts on the peripheral lower conductive lines, variable resistance patterns horizontally spaced apart from each other on the lower electrode contacts. The lower electrode contacts are respectively connected to the variable resistance patterns. Peripheral conductive lines are horizontally spaced apart from the variable resistance patterns on the peripheral conductive contacts. The peripheral conductive contacts are connected to the peripheral conductive lines. The cell and peripheral lower conductive lines are connected to the lower electrode contacts and the peripheral conductive contacts, respectively. The cell and peripheral lower conductive lines are at the same height. A pitch of the cell lower conductive lines directly adjacent to each other is greater than a pitch of the peripheral lower conductive lines directly adjacent to each other.
