18448045. Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Po-Hsiang Huang of Tainan City (TW)
Fong-Yuan Chang of Hsinchu County (TW)
Tsui-Ping Wang of Zhubei City (TW)
Yi-Shin Chu of Hsinchu City (TW)
Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit - A simplified explanation of the abstract
This abstract first appeared for US patent application 18448045 titled 'Antenna Effect Protection and Electrostatic Discharge Protection for Three-Dimensional Integrated Circuit
Simplified Explanation
The abstract describes a 3D IC package with a first IC die, a second IC die stacked on top of the first die, TSVs connecting the two dies, and a protection module within the first substrate.
- First IC die with a first substrate at the back side.
- Second IC die stacked on the back side of the first die.
- TSV connecting the first and second IC dies.
- Protection module within the first substrate, electrically connected to the TSV.
Potential Applications
The technology can be applied in advanced semiconductor packaging, high-performance computing, and integrated circuit design.
Problems Solved
1. Improved electrical connectivity between stacked IC dies. 2. Enhanced protection against external factors for the IC package.
Benefits
1. Increased performance and efficiency in electronic devices. 2. Compact design for space-saving in electronic systems.
Potential Commercial Applications
Optimizing 3D IC packages for data centers, telecommunications equipment, and consumer electronics.
Possible Prior Art
Prior art may include existing 3D IC packaging technologies, TSV designs, and protection modules in semiconductor devices.
Unanswered Questions
How does the protection module impact the overall performance of the 3D IC package?
The protection module may introduce additional resistance or capacitance to the electrical connections, affecting signal integrity and speed.
What are the limitations of TSV technology in 3D IC packaging?
TSVs may face challenges such as thermal management, reliability issues, and manufacturing complexities that could impact the scalability of the technology.
Original Abstract Submitted
A 3D IC package is provided. The 3D IC package includes: a first IC die comprising a first substrate at a back side of the first IC die; a second IC die stacked at the back side of the first IC die and facing the first substrate; a TSV through the first substrate and electrically connecting the first IC die and the second IC die, the TSV having a TSV cell including a TSV cell boundary surrounding the TSV; and a protection module fabricated in the first substrate, wherein the protection module is electrically connected to the TSV, and the protection module is within the TSV cell.
