18447904. SENSE AMPLIFIER FOR COUPLING EFFECT REDUCTION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SENSE AMPLIFIER FOR COUPLING EFFECT REDUCTION
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ku-Feng Lin of Hsinchu City (TW)
Jui-Che Tsai of Hsinchu County (TW)
Perng-Fei Yuh of Walnut Creek CA (US)
SENSE AMPLIFIER FOR COUPLING EFFECT REDUCTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447904 titled 'SENSE AMPLIFIER FOR COUPLING EFFECT REDUCTION
Simplified Explanation
The abstract describes a sense amplifier that includes a first input transistor, a second input transistor, a latch circuit, and a first capacitor. The latch circuit consists of a first latch transistor and a second latch transistor. The first capacitor is connected between the first input gate and the fourth drain/source terminal to reduce a coupling effect in the sense amplifier.
- The sense amplifier includes a first input transistor and a second input transistor.
- The latch circuit is composed of a first latch transistor and a second latch transistor.
- A first capacitor is connected between the first input gate and the fourth drain/source terminal.
- The purpose of the first capacitor is to reduce a coupling effect in the sense amplifier.
Potential applications of this technology:
- Memory circuits: The sense amplifier can be used in memory circuits to amplify and detect signals from memory cells.
- Data processing: The sense amplifier can be used in data processing circuits to amplify and detect signals from input devices.
Problems solved by this technology:
- Coupling effect: The first capacitor helps reduce the coupling effect in the sense amplifier, improving its performance and accuracy.
Benefits of this technology:
- Improved performance: By reducing the coupling effect, the sense amplifier can provide more accurate and reliable signal detection.
- Increased efficiency: The sense amplifier can amplify weak signals, allowing for better data processing and memory circuit operation.
Original Abstract Submitted
A sense amplifier including a first input transistor having a first input gate and a first drain/source terminal, a second input transistor having a second input gate and a second drain/source terminal, a latch circuit, and a first capacitor. The latch circuit includes a first latch transistor having a third drain/source terminal connected to the first drain/source terminal and a second latch transistor having a fourth drain/source terminal connected to the second drain/source terminal. The first capacitor is connected on one side to the first input gate and on another side to the fourth drain/source terminal to reduce a coupling effect in the sense amplifier.
