18447739. THREE DIMENSIONAL INTEGRATED CIRCUIT WITH MONOLITHIC INTER-TIER VIAS (MIV) simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

From WikiPatents
Jump to navigation Jump to search

THREE DIMENSIONAL INTEGRATED CIRCUIT WITH MONOLITHIC INTER-TIER VIAS (MIV)

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shih-Wei Peng of Hsinchu City (TW)

Jiann-Tyng Tzeng of Hsin Chu (TW)

Kam-Tou Sio of Zhubei City (TW)

Wei-Cheng Lin of Taichung City (TW)

Wei-An Lai of Taichung City (TW)

THREE DIMENSIONAL INTEGRATED CIRCUIT WITH MONOLITHIC INTER-TIER VIAS (MIV) - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447739 titled 'THREE DIMENSIONAL INTEGRATED CIRCUIT WITH MONOLITHIC INTER-TIER VIAS (MIV)

Simplified Explanation

- A monolithic three-dimensional (3D) integrated circuit (IC) device includes a lower tier with a lower tier cell and an upper tier arranged over the lower tier. - The upper tier consists of a first upper tier cell and a second upper tier cell separated by a predetermined lateral space. - A monolithic inter-tier via (MIV) extends from the lower tier through the predetermined lateral space, with one end connected to the lower tier cell and the other end connected to the first upper tier cell.

Potential Applications

- Advanced electronic devices - High-performance computing systems - Communication equipment

Problems Solved

- Increased integration density - Improved performance and efficiency - Enhanced functionality

Benefits

- Higher circuit density - Faster data processing - Reduced power consumption


Original Abstract Submitted

A monolithic three-dimensional (3D) integrated circuit (IC) device includes a lower tier including a lower tier cell and an upper tier arranged over the lower tier. The upper tier has a first upper tier cell and a second upper tier cell separated by a predetermined lateral space. A monolithic inter-tier via (MIV) extends from the lower tier through the predetermined lateral space, and the MIV has a first end electrically connected to the lower tier cell and a second end electrically connected to the first upper tier cell.

Retrieved from "http://wikipatents.org/index.php?title=18447739._THREE_DIMENSIONAL_INTEGRATED_CIRCUIT_WITH_MONOLITHIC_INTER-TIER_VIAS_(MIV)_simplified_abstract_(TAIWAN_SEMICONDUCTOR_MANUFACTURING_COMPANY,_LTD.)&oldid=35115"