18447581. DICING METHOD FOR STACKED SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
DICING METHOD FOR STACKED SEMICONDUCTOR DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Tsung-Hsing Lu of Hsinchu County (TW)
Pei-Haw Tsao of Tai-chung (TW)
DICING METHOD FOR STACKED SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447581 titled 'DICING METHOD FOR STACKED SEMICONDUCTOR DEVICES
Simplified Explanation
The patent application describes a semiconductor structure consisting of two devices bonded together. The first device has two sidewalls, one facing away from the second device and one facing towards it. The second device also has two sidewalls, one facing towards the first device and one facing away from it. The surface roughness of the second sidewall of the first device is greater than that of the first sidewall, and the surface roughness of the fourth sidewall of the second device is greater than that of the third sidewall.
- The semiconductor structure includes two devices bonded together.
- The first device has a sidewall facing away from the second device, and a sidewall facing towards the second device.
- The second device has a sidewall facing towards the first device, and a sidewall facing away from the first device.
- The surface roughness of the second sidewall of the first device is larger than the surface roughness of the first sidewall.
- The surface roughness of the fourth sidewall of the second device is larger than the surface roughness of the third sidewall.
Potential Applications
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved
- Improved bonding between semiconductor devices
- Enhanced performance of semiconductor structures
Benefits
- Increased surface roughness for better bonding
- Improved overall performance of the semiconductor structure
Original Abstract Submitted
A semiconductor structure includes a first device and a second device bonded on the first device. The first device has a first sidewall distal to the second device and a second sidewall proximal to the second device. A surface roughness of the second sidewall is larger than a surface roughness of the first sidewall. The second device has a third sidewall proximal to the first device and a fourth sidewall distal to the first device. A surface roughness of the fourth sidewall is larger than a surface roughness of the third sidewall.
