18447528. HETEROGENOUS BONDING LAYERS FOR DIRECT SEMICONDUCTOR BONDING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
HETEROGENOUS BONDING LAYERS FOR DIRECT SEMICONDUCTOR BONDING
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kuang-Wei Cheng of Hsinchu City (TW)
Chyi-Tsong Ni of Hsinchu City (TW)
HETEROGENOUS BONDING LAYERS FOR DIRECT SEMICONDUCTOR BONDING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447528 titled 'HETEROGENOUS BONDING LAYERS FOR DIRECT SEMICONDUCTOR BONDING
Simplified Explanation
The abstract describes a method for directly bonding two semiconductor devices using heterogeneous bonding layers. The first bonding layer has a higher concentration of hydroxy-containing silicon, while the second bonding layer has a higher concentration of nitrogen. An anneal process is performed to cause a dehydration reaction, resulting in the formation of silicon oxide bonds between the two bonding layers. The presence of nitrogen in the second bonding layer enhances the effectiveness and strength of the bond.
- A first semiconductor device and a second semiconductor device are bonded together using heterogeneous bonding layers.
- The first bonding layer has a higher concentration of hydroxy-containing silicon.
- The second bonding layer has a higher concentration of nitrogen.
- An anneal process is performed to cause a dehydration reaction.
- The dehydration reaction decomposes the hydroxy components of the first bonding layer.
- Silicon oxide bonds are formed between the first and second bonding layers.
- The presence of nitrogen in the second bonding layer enhances the effectiveness of the dehydration reaction.
- The nitrogen also improves the effectiveness and strength of the bond between the two bonding layers.
Potential Applications
- Semiconductor manufacturing
- Integrated circuit fabrication
- Microelectronics industry
Problems Solved
- Enables direct bonding of semiconductor devices
- Improves the strength and effectiveness of the bond between the bonding layers
Benefits
- Enhanced bonding strength
- Improved effectiveness of the dehydration reaction
- Enables the formation of silicon oxide bonds between the bonding layers
Original Abstract Submitted
A first semiconductor device and a second semiconductor device may be directly bonded using heterogeneous bonding layers. A first bonding layer may be formed on the first semiconductor device and the second bonding layer may be formed on the second semiconductor device. The first bonding layer may include a higher concentration of hydroxy-containing silicon relative to the second bonding layer. The second bonding layer may include silicon with a higher concentration of nitrogen relative to the first bonding layer. An anneal may be performed to cause a dehydration reaction that results in decomposition of the hydroxy components of the first bonding layer, which forms silicon oxide bonds between the first bonding layer and the second bonding layer. The nitrogen in the second bonding layer increases the effectiveness of the dehydration reaction and the effectiveness and strength of the bond between the first bonding layer and the second bonding layer.
