18446827. VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE VERTICAL SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)

From WikiPatents
Jump to navigation Jump to search

VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE VERTICAL SEMICONDUCTOR DEVICE

Organization Name

SK hynix Inc.

Inventor(s)

In-Su Park of Icheon-si Gyeonggi-do (KR)

Jong-Gi Kim of Yongin-si Gyeonggi-do (KR)

Hai-Won Kim of Icheon-si Gyeonggi-do (KR)

Hoe-Min Jeong of Seoul (KR)

VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE VERTICAL SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446827 titled 'VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE VERTICAL SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a vertical semiconductor device that includes a lower structure, a multi-layer stack structure, a vertical structure, a vertical source line, and a horizontal source channel contact.

  • The lower structure serves as a foundation for the device.
  • The multi-layer stack structure consists of a source layer and gate electrodes.
  • The vertical structure penetrates the multi-layer stack structure and includes a channel layer that is insulated from the source layer.
  • The vertical source line is spaced apart from the vertical structure and contacts the source layer.
  • The horizontal source channel contact connects the source layer and the channel layer and includes two conductive layers with different dopants.

Potential Applications

  • This technology can be used in various electronic devices such as transistors, integrated circuits, and memory devices.
  • It can be applied in the field of telecommunications, computing, and consumer electronics.

Problems Solved

  • The vertical semiconductor device solves the problem of efficient vertical integration of different layers in a semiconductor structure.
  • It addresses the challenge of achieving proper electrical connections between the source layer and the channel layer.

Benefits

  • The vertical semiconductor device allows for compact and efficient integration of multiple layers, leading to improved performance and functionality.
  • The use of different dopants in the horizontal source channel contact enhances the device's electrical properties and enables precise control over its operation.
  • The technology offers potential cost savings in manufacturing processes due to its simplified structure and improved efficiency.


Original Abstract Submitted

A vertical semiconductor device includes: a lower structure; a multi-layer stack structure including a source layer formed over the lower structure and gate electrodes formed over the source layer; a vertical structure penetrating the multi-layer stack structure and including a channel layer insulated from the source layer; a vertical source line spaced apart from the vertical structure to penetrate the multi-layer stack structure and contacting the source layer; and a horizontal source channel contact suitable for coupling the source layer and the channel layer and including a first conductive layer and a second conductive layer that include different dopants.

Retrieved from "http://wikipatents.org/index.php?title=18446827._VERTICAL_SEMICONDUCTOR_DEVICE_AND_METHOD_FOR_FABRICATING_THE_VERTICAL_SEMICONDUCTOR_DEVICE_simplified_abstract_(SK_hynix_Inc.)&oldid=18567"