18446400. LITHOGRAPHY SYSTEM AND METHODS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
LITHOGRAPHY SYSTEM AND METHODS
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Cheng Hung Tsai of Hsinchu (TW)
Shang-Chieh Chien of Hsinchu (TW)
LITHOGRAPHY SYSTEM AND METHODS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18446400 titled 'LITHOGRAPHY SYSTEM AND METHODS
Simplified Explanation
The patent application describes a method for lithography, a process used in semiconductor manufacturing. The method involves depositing a mask layer on a substrate and directing radiation from a sectional collector of a lithography system onto the mask layer to create a pattern. The radiation is directed from both a central collector section and a peripheral collector section, which are separated by a gap. The method further includes forming openings in the mask layer by removing regions exposed to the radiation and removing material from the underlying layer exposed by the openings.
- The method involves depositing a mask layer on a substrate.
- Radiation from a sectional collector is directed onto the mask layer to create a pattern.
- The radiation is directed from both a central collector section and a peripheral collector section.
- The central and peripheral collector sections are separated by a gap.
- Openings are formed in the mask layer by removing regions exposed to the radiation.
- Material from the underlying layer exposed by the openings is removed.
Potential applications of this technology:
- Semiconductor manufacturing
- Integrated circuit fabrication
- Nanotechnology research
Problems solved by this technology:
- Provides a method for creating precise patterns on a mask layer for semiconductor manufacturing.
- Allows for the removal of material from an underlying layer with accuracy and control.
Benefits of this technology:
- Enables the production of high-quality integrated circuits with precise patterns.
- Improves the efficiency and accuracy of lithography processes.
- Facilitates advancements in semiconductor manufacturing and nanotechnology research.
Original Abstract Submitted
A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.
