18402172. Write Driver Boost Circuit for Memory Cells simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 Write Driver Boost Circuit for Memory Cells
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 Write Driver Boost Circuit for Memory Cells - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
Write Driver Boost Circuit for Memory Cells
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Sanjeev Kumar Jain of Ottawa (CA)
Write Driver Boost Circuit for Memory Cells - A simplified explanation of the abstract
This abstract first appeared for US patent application 18402172 titled 'Write Driver Boost Circuit for Memory Cells
Simplified Explanation
The abstract describes a boost circuit for generating a boost voltage for a write operation of a memory cell. Here are some key points to explain the patent/innovation:
- Boost circuit includes two inverters, a transistor, and a capacitor
- First inverter and second inverter invert the write signal
- Transistor charges the capacitor based on the write signal to provide a supply voltage to a write driver
- Capacitor generates and provides a delta voltage to the write driver
Potential Applications
The technology can be applied in various memory devices, such as DRAM, SRAM, and flash memory, to improve the efficiency of write operations.
Problems Solved
The boost circuit addresses the need for a reliable and efficient method of generating a boost voltage for memory write operations, ensuring data is written accurately and quickly.
Benefits
- Improved write operation efficiency - Reliable boost voltage generation - Enhanced memory cell performance
Potential Commercial Applications
"Boost Circuit for Memory Write Operations: Enhancing Data Storage Efficiency"
Possible Prior Art
There may be existing boost circuits for memory write operations, but the specific configuration described in this patent application may offer unique advantages in terms of efficiency and reliability.
Unanswered Questions
How does the boost circuit impact overall memory cell performance?
The article does not delve into the specific performance improvements or metrics that can be achieved by implementing this boost circuit in memory devices.
Are there any potential drawbacks or limitations to using this boost circuit?
The article does not discuss any potential drawbacks or limitations that may arise from implementing this boost circuit in memory devices.
Original Abstract Submitted
Circuits, systems, and methods are described herein for generating a boost voltage for a write operation of a memory cell. In one embodiment, a boost circuit includes a first inverter and a second inverter, each configured to invert a write signal. The boost circuit also includes a transistor and a capacitor. The transistor is coupled to an output of the first inverter. The transistor is configured to charge a capacitor based on the write signal and provide a supply voltage to a write driver. The capacitor is coupled to an output of the second inverter. The capacitor is configured to generate and provide a delta voltage to the write driver.
