18402144. VERTICAL NON-VOLATILE MEMORY DEVICES HAVING A MULTI-STACK STRUCTURE WITH ENHANCED PHOTOLITHOGRAPHIC ALIGNMENT CHARACTERISTICS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 VERTICAL NON-VOLATILE MEMORY DEVICES HAVING A MULTI-STACK STRUCTURE WITH ENHANCED PHOTOLITHOGRAPHIC ALIGNMENT CHARACTERISTICS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 VERTICAL NON-VOLATILE MEMORY DEVICES HAVING A MULTI-STACK STRUCTURE WITH ENHANCED PHOTOLITHOGRAPHIC ALIGNMENT CHARACTERISTICS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
VERTICAL NON-VOLATILE MEMORY DEVICES HAVING A MULTI-STACK STRUCTURE WITH ENHANCED PHOTOLITHOGRAPHIC ALIGNMENT CHARACTERISTICS
Organization Name
Inventor(s)
Youngjin Kwon of Gwacheon-si (KR)
Dongseog Eun of Seongnam-si (KR)
VERTICAL NON-VOLATILE MEMORY DEVICES HAVING A MULTI-STACK STRUCTURE WITH ENHANCED PHOTOLITHOGRAPHIC ALIGNMENT CHARACTERISTICS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18402144 titled 'VERTICAL NON-VOLATILE MEMORY DEVICES HAVING A MULTI-STACK STRUCTURE WITH ENHANCED PHOTOLITHOGRAPHIC ALIGNMENT CHARACTERISTICS
Simplified Explanation
The abstract describes a vertical-type nonvolatile memory device with a multi-stack structure that reduces susceptibility to misalignment of a vertical channel layer. The device includes a main chip area with a stepped structure, a cell area, and an extension area formed in a multi-stack structure, as well as an outer chip area surrounding the main chip area with a step key.
- The main chip area of the nonvolatile memory device includes a cell area and an extension area arranged in a multi-stack structure.
- The main chip area has a stepped structure, with a first layer on a substrate and a second layer on the first layer.
- A lower vertical channel layer is arranged in the first layer, while the step key in the outer chip area includes an alignment vertical channel layer with a top surface lower than the lower vertical channel layer.
Potential Applications
The technology described in this patent application could be applied in:
- Solid-state drives (SSDs)
- Smartphones and other mobile devices
- Industrial automation systems
Problems Solved
This technology solves the problem of misalignment of vertical channel layers in nonvolatile memory devices, which can lead to performance issues and reduced reliability.
Benefits
The benefits of this technology include:
- Improved performance and reliability of nonvolatile memory devices
- Enhanced data storage capabilities
- Increased efficiency in data access and retrieval
Potential Commercial Applications
The potential commercial applications of this technology include:
- Memory chip manufacturing companies
- Electronics manufacturers
- Data storage companies
Possible Prior Art
One possible prior art for this technology could be the development of multi-stack structures in nonvolatile memory devices to improve performance and reliability.
Unanswered Questions
How does this technology compare to existing nonvolatile memory devices in terms of speed and capacity?
The article does not provide a direct comparison between this technology and existing nonvolatile memory devices in terms of speed and capacity.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not address the potential challenges in implementing this technology on a large scale for commercial production.
Original Abstract Submitted
A vertical-type nonvolatile memory device has a multi-stack structure with reduced susceptibility to mis-alignment of a vertical channel layer. This nonvolatile memory device includes: (i) a main chip area including a cell area and an extension area arranged to have a stepped structure, with the cell area and the extension area formed in a multi-stack structure, and (ii) an outer chip area, which surrounds the main chip area and includes a step key therein. The main chip area includes a first layer on a substrate and a second layer on the first layer. A lower vertical channel layer is arranged in the first layer. The step key includes an alignment vertical channel layer, and a top surface of the alignment vertical channel layer is lower than a top surface of the lower vertical channel layer.
