View source for 18400784. STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE simplified abstract (Intel Corporation)

=STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Jiun Hann Sir of Gelugor (MY)|Jiun Hann Sir of Gelugor (MY)]][[Category:Jiun Hann Sir of Gelugor (MY)]]

[[:Category:Poh Boon Khoo of Perai (MY)|Poh Boon Khoo of Perai (MY)]][[Category:Poh Boon Khoo of Perai (MY)]]

[[:Category:Eng Huat Goh of Ayer Itam (MY)|Eng Huat Goh of Ayer Itam (MY)]][[Category:Eng Huat Goh of Ayer Itam (MY)]]

[[:Category:Amruthavalli Pallavi Alur of Tempe AZ (US)|Amruthavalli Pallavi Alur of Tempe AZ (US)]][[Category:Amruthavalli Pallavi Alur of Tempe AZ (US)]]

[[:Category:Debendra Mallik of Chandler AZ (US)|Debendra Mallik of Chandler AZ (US)]][[Category:Debendra Mallik of Chandler AZ (US)]]

==STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 18400784 titled 'STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE

==Simplified Explanation==

An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB allows for useful trace and via real estate below the EMIB to be employed in the package substrate.

* Fabricated on a substrate using photolithographic techniques
* EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate
* Low Z-height allows for useful trace and via real estate below the EMIB to be employed in the package substrate

== Potential Applications ==
The technology can be applied in:
* High-performance computing
* Data centers
* Telecommunications

== Problems Solved ==
* Efficient use of real estate in package substrates
* Improved interconnectivity in integrated circuits

== Benefits ==
* Enhanced performance
* Cost-effective manufacturing
* Compact design

== Potential Commercial Applications ==
Optimizing interconnectivity in integrated circuits for:
* Mobile devices
* Automotive electronics
* IoT devices

== Possible Prior Art ==
One possible prior art is the use of through-silicon vias (TSVs) in 3D integrated circuits to improve interconnectivity.

== Unanswered Questions ==

=== How does the EMIB technology compare to other interconnect solutions in terms of performance and cost? ===
The article does not provide a direct comparison with other interconnect solutions, leaving uncertainty about the competitiveness of EMIB in the market.

=== Are there any limitations or challenges in implementing EMIB technology in different types of integrated circuits? ===
The article does not address potential limitations or challenges that may arise when implementing EMIB technology in various integrated circuit designs, leaving room for further exploration of this aspect.


==Original Abstract Submitted==

An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.



[[Category:H01L23/522]]
[[Category:H01L23/00]]