18400784. STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE simplified abstract (Intel Corporation)

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STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE

Organization Name

Intel Corporation

Inventor(s)

Jiun Hann Sir of Gelugor (MY)

Poh Boon Khoo of Perai (MY)

Eng Huat Goh of Ayer Itam (MY)

Amruthavalli Pallavi Alur of Tempe AZ (US)

Debendra Mallik of Chandler AZ (US)

STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18400784 titled 'STRIPPED REDISTRUBUTION-LAYER FABRICATION FOR PACKAGE-TOP EMBEDDED MULTI-DIE INTERCONNECT BRIDGE

Simplified Explanation

An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB allows for useful trace and via real estate below the EMIB to be employed in the package substrate.

  • Fabricated on a substrate using photolithographic techniques
  • EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate
  • Low Z-height allows for useful trace and via real estate below the EMIB to be employed in the package substrate

Potential Applications

The technology can be applied in:

  • High-performance computing
  • Data centers
  • Telecommunications

Problems Solved

  • Efficient use of real estate in package substrates
  • Improved interconnectivity in integrated circuits

Benefits

  • Enhanced performance
  • Cost-effective manufacturing
  • Compact design

Potential Commercial Applications

Optimizing interconnectivity in integrated circuits for:

  • Mobile devices
  • Automotive electronics
  • IoT devices

Possible Prior Art

One possible prior art is the use of through-silicon vias (TSVs) in 3D integrated circuits to improve interconnectivity.

Unanswered Questions

How does the EMIB technology compare to other interconnect solutions in terms of performance and cost?

The article does not provide a direct comparison with other interconnect solutions, leaving uncertainty about the competitiveness of EMIB in the market.

Are there any limitations or challenges in implementing EMIB technology in different types of integrated circuits?

The article does not address potential limitations or challenges that may arise when implementing EMIB technology in various integrated circuit designs, leaving room for further exploration of this aspect.


Original Abstract Submitted

An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.