18396922. DECOUPLING CAPACITORS BASED ON DUMMY THROUGH-SILICON-VIAS simplified abstract (Intel Corporation)
Contents
- 1 DECOUPLING CAPACITORS BASED ON DUMMY THROUGH-SILICON-VIAS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 DECOUPLING CAPACITORS BASED ON DUMMY THROUGH-SILICON-VIAS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
DECOUPLING CAPACITORS BASED ON DUMMY THROUGH-SILICON-VIAS
Organization Name
Inventor(s)
Changyok Park of Portland OR (US)
DECOUPLING CAPACITORS BASED ON DUMMY THROUGH-SILICON-VIAS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18396922 titled 'DECOUPLING CAPACITORS BASED ON DUMMY THROUGH-SILICON-VIAS
Simplified Explanation
The patent application describes IC structures with decoupling capacitors based on dummy TSVs in a support structure. Here are some key points from the abstract:
- Decoupling capacitors are created using dummy TSVs in a support structure.
- The capacitor includes first and second capacitor electrodes with a capacitor insulator between them.
- The first capacitor electrode is made of a first electrically conductive material lining the opening in the support structure.
- The capacitor insulator is a dielectric material lining the opening in the support structure.
- The second capacitor electrode is a second electrically conductive material filling at least a portion of the opening in the support structure.
Potential Applications
The technology described in the patent application could be applied in the following areas:
- Integrated circuit design
- Semiconductor manufacturing
- Electronic devices requiring decoupling capacitors
Problems Solved
The technology addresses the following issues:
- Improving signal integrity in IC structures
- Enhancing power distribution in electronic devices
- Minimizing noise and interference in circuits
Benefits
Some benefits of this technology include:
- Increased efficiency of integrated circuits
- Enhanced performance of electronic devices
- Improved reliability of semiconductor components
Potential Commercial Applications
The technology could be commercially applied in:
- Consumer electronics
- Telecommunications equipment
- Automotive electronics
Possible Prior Art
One possible prior art related to this technology is the use of through-silicon vias (TSVs) in semiconductor devices for vertical interconnects. These TSVs are commonly used for signal routing and power delivery in integrated circuits.
Unanswered Questions
How does this technology compare to traditional decoupling capacitor designs in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and traditional decoupling capacitor designs. Further research or testing would be needed to evaluate the performance and efficiency differences between the two approaches.
What are the potential challenges or limitations of implementing decoupling capacitors based on dummy TSVs in a support structure?
The article does not discuss any challenges or limitations that may arise from implementing this technology. Additional studies or practical applications may reveal obstacles or constraints in utilizing this approach in real-world scenarios.
Original Abstract Submitted
Disclosed herein are IC structures with one or more decoupling capacitors based on dummy TSVs provided in a support structure. An example decoupling capacitor includes first and second capacitor electrodes and a capacitor insulator between them. The first capacitor electrode is a liner of a first electrically conductive material on sidewalls and a bottom of an opening in the support structure, the opening in the support structure extending from the first side towards, but not reaching, the second side. The capacitor insulator is a liner of a dielectric material on sidewalls and a bottom of the opening in the support structure lined with the first electrically conductive material. The second capacitor electrode is a second electrically conductive material filling at least a portion of the opening in the support structure lined with the first electrically conductive material and with the dielectric material.
