18395918. GROUND-CONNECTED SUPPORTS WITH INSULARING SPACERS FOR SEMICONDUCTORMEMORY CAPACTITORS AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 GROUND-CONNECTED SUPPORTS WITH INSULARING SPACERS FOR SEMICONDUCTORMEMORY CAPACTITORS AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 GROUND-CONNECTED SUPPORTS WITH INSULARING SPACERS FOR SEMICONDUCTORMEMORY CAPACTITORS AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
GROUND-CONNECTED SUPPORTS WITH INSULARING SPACERS FOR SEMICONDUCTORMEMORY CAPACTITORS AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Seung Jin Kim of Hwaseong-si (KR)
Byung-Hyun Lee of Hwaseong-si (KR)
GROUND-CONNECTED SUPPORTS WITH INSULARING SPACERS FOR SEMICONDUCTORMEMORY CAPACTITORS AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18395918 titled 'GROUND-CONNECTED SUPPORTS WITH INSULARING SPACERS FOR SEMICONDUCTORMEMORY CAPACTITORS AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract consists of lower electrodes on a substrate, a first electrode support made of a metallic material between the lower electrodes, a dielectric layer extending along the profiles of the first electrode support and lower electrodes, and an upper electrode on the dielectric layer.
- Lower electrodes on a substrate
- First electrode support made of a metallic material between lower electrodes
- Dielectric layer extending along profiles of the first electrode support and lower electrodes
- Upper electrode on the dielectric layer
Potential Applications
The technology described in this patent application could be applied in various electronic devices such as capacitors, sensors, and memory devices.
Problems Solved
This technology solves the problem of improving the performance and efficiency of semiconductor devices by providing a structure with enhanced electrical properties and reliability.
Benefits
The benefits of this technology include increased device performance, improved reliability, and potentially reduced power consumption in electronic devices.
Potential Commercial Applications
The technology described in this patent application could have commercial applications in the semiconductor industry for manufacturing advanced electronic components with improved performance and reliability.
Possible Prior Art
One possible prior art for this technology could be the use of similar electrode structures in semiconductor devices for enhancing electrical properties and device performance.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and reliability?
This article does not provide a direct comparison with existing semiconductor devices to assess the performance and reliability improvements offered by this technology.
What specific electronic devices could benefit the most from this technology?
The article does not specify which electronic devices could benefit the most from the technology described, leaving room for further exploration and analysis.
Original Abstract Submitted
A semiconductor device may comprise: a plurality of lower electrodes which are on a substrate; a first electrode support which is between adjacent lower electrodes and comprises a metallic material; a dielectric layer which is on the lower electrodes and the first electrode support to extend along profiles of the first electrode support and each of the lower electrodes; and an upper electrode which is on the dielectric layer.
