18392294. PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD simplified abstract (Tokyo Electron Limited)
Contents
- 1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Organization Name
Inventor(s)
Chishio Koshimizu of Miyagi (JP)
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18392294 titled 'PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Simplified Explanation
The patent application describes a plasma processing apparatus that adjusts the frequencies of radio-frequency power in each bias cycle of electrical bias energy to improve the match based on an evaluation value.
- The radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy.
- It uses a reference time series of frequencies of the radio-frequency power in each bias cycle.
- The radio-frequency power supply repeats using a changed time series of frequencies to increase the match based on an evaluation value.
- The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling multiple time zones of the reference time series in a time direction.
Potential Applications
This technology could be applied in semiconductor manufacturing processes, specifically in plasma etching and deposition systems.
Problems Solved
This innovation helps improve the efficiency and accuracy of plasma processing by adjusting the frequencies of radio-frequency power in each bias cycle.
Benefits
- Enhanced control over plasma processing parameters - Improved uniformity and precision in material etching and deposition
Potential Commercial Applications
"Optimizing Radio-Frequency Power in Plasma Processing for Semiconductor Manufacturing"
Possible Prior Art
There may be prior art related to optimizing radio-frequency power in plasma processing systems, but specific examples are not provided in the abstract.
Unanswered Questions
How does this technology impact the overall efficiency of plasma processing systems?
This technology can potentially improve the efficiency of plasma processing systems by optimizing the frequencies of radio-frequency power in each bias cycle.
What are the potential cost implications of implementing this technology in plasma processing equipment?
The cost implications of implementing this technology may vary depending on the complexity of the system and the specific requirements of the application.
Original Abstract Submitted
In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.
