18390439. ION IMPLANTATION WITH ANNEALING FOR SUBSTRATE CUTTING simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

ION IMPLANTATION WITH ANNEALING FOR SUBSTRATE CUTTING

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Huicheng Chang of Tainan City (TW)

Jyh-Cherng Sheu of Hsinchu (TW)

Chen-Fong Tsai of Hsinchu (TW)

Yun Chen Teng of New Taipei City (TW)

Han-De Chen of Hsinchu (TW)

Yee-Chia Yeo of Hsinchu (TW)

ION IMPLANTATION WITH ANNEALING FOR SUBSTRATE CUTTING - A simplified explanation of the abstract

This abstract first appeared for US patent application 18390439 titled 'ION IMPLANTATION WITH ANNEALING FOR SUBSTRATE CUTTING

Simplified Explanation

The patent application describes a method of ion implantation combined with annealing using a pulsed laser or a furnace for cutting substrate in forming semiconductor devices.

• The method includes forming a transistor structure on a first semiconductor substrate, forming front-side and back-side interconnect structures, bonding a carrier substrate to the front-side interconnect structure, implanting ions into the first semiconductor substrate to form an implantation region, and removing the first semiconductor substrate by applying an annealing process to separate the implantation region from the remainder region.

• The method results in the formation of semiconductor devices with improved performance and efficiency due to the precise ion implantation and annealing process.

Potential Applications

This technology can be applied in the manufacturing of various semiconductor devices such as transistors, diodes, and integrated circuits.

Problems Solved

This technology solves the problem of substrate cutting in semiconductor device fabrication, providing a more efficient and precise method compared to traditional techniques.

Benefits

The benefits of this technology include improved device performance, increased efficiency in manufacturing processes, and the ability to create more complex semiconductor devices.

Potential Commercial Applications

This technology can be utilized in the production of consumer electronics, communication devices, automotive electronics, and other semiconductor-based products.

Possible Prior Art

One possible prior art in this field is the use of ion implantation and annealing processes in semiconductor manufacturing, but the specific combination with substrate cutting using a pulsed laser or a furnace may be a novel aspect of this patent application.

How does this technology compare to existing methods of substrate cutting in semiconductor device fabrication?

This article does not provide a direct comparison with existing methods of substrate cutting, so it is unclear how this technology stacks up against traditional techniques in terms of efficiency and cost-effectiveness.

What are the potential limitations or challenges in implementing this technology on a large scale in semiconductor manufacturing facilities?

The article does not address any potential limitations or challenges that may arise when implementing this technology on a large scale, such as scalability, cost of equipment, or compatibility with existing manufacturing processes.

Original Abstract Submitted

Methods of ion implantation combined with annealing using a pulsed laser or a furnace for cutting substrate in forming semiconductor devices and semiconductor devices including the same are disclosed. In an embodiment, a method includes forming a transistor structure of a device on a first semiconductor substrate; forming a front-side interconnect structure over a front side of the transistor structure; bonding a carrier substrate to the front-side interconnect structure; implanting ions into the first semiconductor substrate to form an implantation region of the first semiconductor substrate; and removing the first semiconductor substrate. Removing the first semiconductor substrate includes applying an annealing process to separate the implantation region from a remainder region of the first semiconductor substrate. The method also includes forming a back-side interconnect structure over a back side of the transistor structure.