18389827. PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS simplified abstract (Tokyo Electron Limited)

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PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

Organization Name

Tokyo Electron Limited

Inventor(s)

Hironari Sasagawa of Miyagi (JP)

Sho Kumakura of Miyagi (JP)

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18389827 titled 'PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

Simplified Explanation

The patent application describes a plasma processing method that involves generating plasma to form a film on a recess in a processing container, monitoring the plasma state, and determining the need for re-execution of the generating and processing conditions based on the monitored plasma state.

  • Plasma processing method:
   * Providing a substrate with a recess in a processing container
   * Generating plasma in the container to form a film on the recess
   * Monitoring the state of the generated plasma
   * Determining the necessity of re-execution of the generating and processing conditions based on the monitored plasma state

Potential Applications

The technology can be applied in various industries such as semiconductor manufacturing, microelectronics, and nanotechnology for precise and controlled plasma processing of materials.

Problems Solved

1. Ensures uniform film deposition on recessed surfaces 2. Optimizes plasma processing conditions for efficient material treatment

Benefits

1. Improved film quality and uniformity 2. Enhanced control over plasma processing parameters 3. Increased efficiency and productivity in material processing

Potential Commercial Applications

Optimizing plasma processing for semiconductor fabrication SEO Optimized Title: "Plasma Processing for Semiconductor Fabrication"

Possible Prior Art

One possible prior art could be a similar plasma processing method used in the semiconductor industry for thin film deposition on substrates.

Unanswered Questions

How does the monitoring of the plasma state impact the overall efficiency of the process?

Monitoring the plasma state allows for real-time adjustments to the processing conditions, ensuring optimal film deposition and quality.

What are the specific parameters used to determine the necessity of re-execution of the generating and processing conditions?

The specific parameters could include film thickness, uniformity, and adherence to the substrate, among others.


Original Abstract Submitted

A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.