18381908. IMAGE SENSOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 IMAGE SENSOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 IMAGE SENSOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
IMAGE SENSOR
Organization Name
Inventor(s)
Masato Fujita of Suwon-si (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18381908 titled 'IMAGE SENSOR
Simplified Explanation
The patent application describes an image sensor with a vertical transfer gate for transferring photocharges collected in the photoelectric conversion region to a floating diffusion region.
- The image sensor comprises a semiconductor substrate with a photoelectric conversion region and a floating diffusion region.
- A vertical transfer gate on the first surface of the semiconductor substrate is used to transfer photocharges collected in the photoelectric conversion region to the floating diffusion region.
- The vertical transfer gate includes a first vertical electrode portion and a second vertical electrode portion connected to the photoelectric conversion region.
Potential Applications
This technology can be applied in:
- Digital cameras
- Smartphones
- Surveillance cameras
Problems Solved
- Improved image quality
- Faster image processing
Benefits
- Higher sensitivity
- Reduced noise
- Enhanced image resolution
Potential Commercial Applications
Optimizing Image Sensors for Enhanced Performance
Possible Prior Art
Prior art in image sensor technology includes the use of horizontal transfer gates for transferring photocharges within the sensor.
Unanswered Questions
How does this technology compare to existing image sensor designs?
This article does not provide a direct comparison with other image sensor designs in terms of performance and efficiency.
What are the manufacturing costs associated with implementing this technology?
The article does not address the potential manufacturing costs of integrating this vertical transfer gate design into image sensors.
Original Abstract Submitted
An image sensor, comprising a semiconductor substrate having first and second surfaces opposed to each other, a photoelectric conversion region in the semiconductor substrate, a floating diffusion region adjacent to the first surface in the semiconductor substrate, and a vertical transfer gate on the first surface of the semiconductor substrate, and extending in a direction perpendicular to the first surface and connected to the photoelectric conversion region. The vertical transfer gate may transfer photocharges collected in the photoelectric conversion region to the floating diffusion region. The vertical transfer gate includes a first vertical electrode portion and a second vertical electrode portion extending from the first surface of the semiconductor substrate in the vertical direction, and connected to the photoelectric conversion region, respectively.
