18380144. SEMICONDUCTOR PROCESSING APPARATUS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR PROCESSING APPARATUS
Organization Name
Inventor(s)
Chanhoon Park of Suwon-si (KR)
SEMICONDUCTOR PROCESSING APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18380144 titled 'SEMICONDUCTOR PROCESSING APPARATUS
Simplified Explanation
The semiconductor processing apparatus described in the patent application includes an upper electrode and a substrate on a lower electrode inside a process chamber. It also includes a first power generator that provides a low-frequency signal to the lower electrode, which varies between a reference voltage and a first voltage at intervals of a first cycle. Additionally, there is a second power generator that provides a high-frequency signal to the lower electrode, which has a sinusoidal waveform that oscillates at intervals of a second cycle shorter than the first cycle. A direct-current (DC) power generator is also present, providing a DC bias to the upper electrode. The high-frequency signal is turned off during at least part of the duration when the low-frequency signal has the first voltage, and it is turned on and off at intervals of a third cycle different from the first and second cycles.
- The semiconductor processing apparatus has an upper electrode and a lower electrode with a substrate, allowing for processing of semiconductors.
- A low-frequency signal is provided to the lower electrode, varying between a reference voltage and a first voltage at specific intervals.
- A high-frequency signal is also provided to the lower electrode, with a sinusoidal waveform that oscillates at shorter intervals than the low-frequency signal.
- A DC power generator provides a DC bias to the upper electrode.
- The high-frequency signal is turned off when the low-frequency signal has the first voltage, and it is turned on and off at different intervals.
Potential applications of this technology:
- Semiconductor manufacturing processes
- Integrated circuit fabrication
- Thin film deposition
Problems solved by this technology:
- Improved control and precision in semiconductor processing
- Enhanced uniformity and quality of thin film deposition
- Reduction of defects and impurities in integrated circuit fabrication
Benefits of this technology:
- Increased efficiency and productivity in semiconductor manufacturing
- Improved yield and reliability of integrated circuits
- Enhanced performance and functionality of electronic devices
Original Abstract Submitted
A semiconductor processing apparatus includes an upper electrode and a substrate on a lower electrode disposed inside the process chamber, a first power generator configured to provide a low-frequency signal to the lower electrode, wherein the low-frequency signal varies between a reference voltage and a first voltage at intervals of a first cycle, a second power generator configured to provide a high-frequency signal to the lower electrode, wherein the high-frequency signal has a sinusoidal waveform that oscillates at intervals of a second cycle shorter than the first cycle, and a direct-current (DC) power generator configured to provide a DC bias to the upper electrode. The high-frequency signal is turned off during at least part of a duration for which the low-frequency signal has the first voltage, and the high-frequency signal is turned on and turned off at intervals of a third cycle different from the first and second cycles.
