18379828. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING DOUBLE PATTERNING PROCESS simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING DOUBLE PATTERNING PROCESS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING DOUBLE PATTERNING PROCESS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING DOUBLE PATTERNING PROCESS
Organization Name
Inventor(s)
Tsunehiro Nishi of Suwon-si (KR)
Yonghoon Moon of Suwon-si (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING DOUBLE PATTERNING PROCESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18379828 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING DOUBLE PATTERNING PROCESS
Simplified Explanation
The method described in the abstract involves manufacturing a semiconductor device by forming organic and inorganic patterns on a supporting layer and selectively etching ion-implanted inorganic patterns to create space patterns.
- Formation of organic and inorganic patterns on a supporting layer
- Inclusion of ion-implanted patterns in both organic and inorganic patterns
- Selective etching of ion-implanted inorganic patterns to create space patterns
Potential Applications
The technology can be applied in the manufacturing of various semiconductor devices such as integrated circuits, sensors, and memory devices.
Problems Solved
This method helps in achieving precise patterning and control of features in semiconductor devices, improving their performance and reliability.
Benefits
The technology allows for the creation of complex patterns with high precision, leading to enhanced functionality and efficiency of semiconductor devices.
Potential Commercial Applications
The technology can be utilized in the production of advanced electronic devices for industries such as telecommunications, computing, and consumer electronics.
Possible Prior Art
Prior methods of semiconductor device manufacturing may involve similar processes of patterning organic and inorganic materials, but the specific technique of selectively etching ion-implanted inorganic patterns to create space patterns may be a novel aspect of this technology.
Unanswered Questions
How does this method compare to traditional semiconductor manufacturing techniques?
This method offers improved control and precision in creating patterns, but it would be beneficial to compare its efficiency and cost-effectiveness with traditional methods.
What are the potential limitations or challenges of implementing this technology on a larger scale?
Scaling up this manufacturing process for mass production may pose challenges in terms of consistency, yield rates, and overall cost. Further research and development may be needed to address these issues.
Original Abstract Submitted
A method of manufacturing a semiconductor device, including forming a plurality of first organic patterns spaced apart from one another in one direction on a supporting layer, wherein the plurality of first organic patterns include ion-implanted patterns, forming a plurality of inorganic patterns on the supporting layer that are in contact with the plurality of first organic patterns and spaced apart from one other in the one direction, wherein the inorganic patterns include ion-implanted patterns, forming a plurality of second organic patterns arranged between the plurality of inorganic patterns on the supporting layer, wherein the second organic patterns include ion-implanted patterns, and selectively etching the ion-implanted inorganic patterns to form a plurality of space patterns that are arranged between the ion-implanted first organic patterns and the ion-implanted second organic patterns.
