18378166. SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE
Organization Name
Inventor(s)
Yongho Kim of Hwaseong-si (KR)
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18378166 titled 'SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR PACKAGE
Simplified Explanation
The semiconductor package described in the patent application consists of two semiconductor devices connected to each other through metal bump structures. The first semiconductor device has a first pad with a first metal bump structure, while the second semiconductor device is placed on top of the first device and has a third pad with a second metal bump structure. The first and second metal bump structures are bonded together to establish an electrical connection between the two semiconductor devices.
Key points of the patent/innovation:
- The semiconductor package includes two semiconductor devices connected through metal bump structures.
- The first semiconductor device has a first pad with a first metal bump structure.
- The second semiconductor device is placed on top of the first device and has a third pad with a second metal bump structure.
- The first and second metal bump structures are bonded together to establish an electrical connection between the two semiconductor devices.
- Each metal bump structure consists of first to third metal patterns.
- The first to third metal patterns of the first metal bump structure are located on the first pad.
- The first to third metal patterns of the second metal bump structure are located on the third pad.
- The first and third metal patterns include a first metal with a lower coefficient of thermal expansion than the second metal of the second metal pattern.
Potential applications of this technology:
- Integrated circuits and microchips
- Electronic devices and gadgets
- Semiconductor manufacturing industry
Problems solved by this technology:
- Provides a reliable and efficient method for electrically connecting two semiconductor devices.
- Addresses the issue of thermal expansion mismatch between different metals used in metal bump structures.
Benefits of this technology:
- Improved electrical connectivity between semiconductor devices.
- Enhanced reliability and performance of integrated circuits.
- Reduces the risk of damage due to thermal expansion mismatch.
Original Abstract Submitted
A semiconductor package includes: a first semiconductor device including a first pad and a first metal bump structure on the first pad; and a second semiconductor device on the first semiconductor device, and including a third pad and a second metal bump structure on the third pad, wherein the first and second metal bump structures are bonded to each other to electrically connect the first and second semiconductor devices to each other. Each of the first and second metal bumps structures includes first to third metal patterns. The first to third metal patterns of the first metal bump structure are on the first pad. The first to third metal patterns of the second metal bump structure are on the third pad. The first and third metal patterns include a first metal having a first coefficient of thermal expansion less than that of a second metal of the second metal pattern.
