18372885. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Woosung Yang of Gwangmyeong-si (KR)
JOONHEE Lee of Seongnam-si (KR)
JOON-SUNG Lim of Seongnam-si (KR)
EUNTAEK Jung of Seongnam-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18372885 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The abstract describes a semiconductor memory device that consists of two substrates, with a lower semiconductor layer and an upper semiconductor layer on top. The device also includes an electrode structure with multiple stacked electrodes, a vertical channel structure that connects to the second substrate, an interlayer dielectric layer that covers the electrode structure, and a cutting structure that penetrates the interlayer dielectric layer and the upper semiconductor layer. The upper semiconductor layer has a sidewall defined by the cutting structure, and the lower semiconductor layer has a sidewall adjacent to the upper sidewall, but horizontally offset from it.
- The semiconductor memory device includes a vertical channel structure that connects to the second substrate, allowing for efficient data transfer.
- The electrode structure with stacked electrodes provides a means for storing and accessing data in the memory device.
- The cutting structure and sidewalls in the upper and lower semiconductor layers allow for precise and controlled electrical connections within the device.
Potential Applications:
- This semiconductor memory device can be used in various electronic devices, such as smartphones, tablets, and computers, to provide efficient and reliable data storage and retrieval.
- It can also be utilized in data centers and servers to enhance the performance and capacity of memory systems.
Problems Solved:
- The device solves the problem of limited data storage and slow data transfer in conventional memory devices.
- It addresses the challenge of achieving precise and controlled electrical connections within a semiconductor memory device.
Benefits:
- The semiconductor memory device offers increased data storage capacity and faster data transfer rates.
- It provides improved reliability and efficiency in data storage and retrieval.
- The device allows for more precise and controlled electrical connections, enhancing overall performance.
Original Abstract Submitted
Disclosed is a semiconductor memory device comprising a second substrate on a first substrate and including a lower semiconductor layer and an upper semiconductor layer on the lower semiconductor layer, an electrode structure on the upper semiconductor layer and including a plurality of stacked electrodes, a vertical channel structure that penetrates the electrode structure and is connected to the second substrate, an interlayer dielectric layer that covers the electrode structure, and a cutting structure that penetrates the interlayer dielectric layer and the upper semiconductor layer. The upper semiconductor layer has a first sidewall defined by the cutting structure. The lower semiconductor layer has a second sidewall adjacent to the first sidewall. The first sidewall and the second sidewall are horizontally offset from each other.
