18372818. SOFT-CHUCKING SCHEME FOR IMPROVED BACKSIDE PARTICLE PERFORMANCE simplified abstract (Applied Materials, Inc.)

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SOFT-CHUCKING SCHEME FOR IMPROVED BACKSIDE PARTICLE PERFORMANCE

Organization Name

Applied Materials, Inc.

Inventor(s)

Tony Jefferson Gnanaprakasa of Mountain View CA (US)

Alvaro Garcia of Mountain View CA (US)

Gautham Bammanahalli of Santa Clara CA (US)

Tatsuichiro Inoue of Santa Clara CA (US)

Nathaniel Moore of Santa Clara CA (US)

SOFT-CHUCKING SCHEME FOR IMPROVED BACKSIDE PARTICLE PERFORMANCE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18372818 titled 'SOFT-CHUCKING SCHEME FOR IMPROVED BACKSIDE PARTICLE PERFORMANCE

Simplified Explanation

The abstract describes a method of chucking and de-chucking a substrate using an electrostatic chuck. The method involves applying different voltages to the chucking electrode and supplying inert gas at different pressures to the backside of the substrate at different time intervals.

  • Chucking and de-chucking method for a substrate using an electrostatic chuck:
   * Apply a first voltage to the chucking electrode during chucking
   * Supply inert gas at a first pressure to the backside of the substrate during chucking
   * Apply a second voltage to the chucking electrode after chucking
   * Supply inert gas at a second pressure to the backside of the substrate after chucking

Potential Applications

The technology can be applied in semiconductor manufacturing processes where precise control of substrate positioning and handling is required.

Problems Solved

1. Ensures secure chucking and de-chucking of substrates without damaging them. 2. Provides a controlled environment for substrate processing.

Benefits

1. Improved substrate handling accuracy and efficiency. 2. Enhanced process control and reliability.

Potential Commercial Applications

Optimizing substrate handling in semiconductor manufacturing processes.

Possible Prior Art

There may be prior art related to chucking and de-chucking methods using electrostatic chucks in semiconductor manufacturing processes.

Unanswered Questions

How does this method compare to traditional chucking methods in terms of substrate handling efficiency and accuracy?

The article does not provide a direct comparison between this method and traditional chucking methods.

What are the specific semiconductor manufacturing processes where this technology can be most beneficial?

The article does not specify the exact semiconductor manufacturing processes where this technology can be most beneficial.


Original Abstract Submitted

Embodiments of this disclosure include methods of chucking and de-chucking a substrate. A method of chucking a substrate to a surface of an electrostatic chuck includes applying a first voltage to a chucking electrode in the ESC during a chucking time interval, supplying an inert gas at a first pressure to a backside of the substrate during the chucking time interval, applying a second voltage to the chucking electrode in the ESC after the chucking time interval, the second voltage being higher than the first voltage, and supplying the inert gas at a second pressure to the backside of the substrate after the chucking time interval, the second pressure being higher than the first pressure of the inert gas.