18372212. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Inoue Naoki of Suwon-si, Gyeonggi-do (KR)
Tsunehiro Nishi of Suwon-si, Gyeonggi-do (KR)
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18372212 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the patent application involves the manufacturing of a semiconductor device through a series of steps including the deposition of various layers, patterning, ion implantation, and mask removal to create a specific pattern on the substrate.
- Sequentially deposit a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate.
- Pattern the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer.
- Implant ions into the exposed region of the organic layer.
- Remove the first mask pattern and a second region of the organic layer to form a second mask pattern exposing a partial region of the hard mask layer.
- Remove the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern.
Potential Applications
The technology described in this patent application could be applied in the manufacturing of various semiconductor devices, such as integrated circuits, microprocessors, and memory chips.
Problems Solved
This method provides a precise and efficient way to create intricate patterns on semiconductor substrates, allowing for the production of high-performance electronic devices with improved functionality.
Benefits
- Enhanced precision in patterning semiconductor devices - Increased efficiency in the manufacturing process - Improved performance and reliability of electronic components
Potential Commercial Applications
This technology could be utilized by semiconductor manufacturers looking to enhance their production processes and develop advanced electronic devices for various industries.
Possible Prior Art
One possible prior art in this field could be the use of similar techniques involving ion implantation and mask patterning in semiconductor device manufacturing processes.
Unanswered Questions
How does this method compare to existing techniques in terms of cost-effectiveness?
The article does not provide information on the cost implications of implementing this method compared to traditional semiconductor manufacturing processes.
Are there any limitations or challenges associated with this method that have not been addressed?
The article does not discuss any potential limitations or challenges that may arise when using this technique in semiconductor device manufacturing.
Original Abstract Submitted
A method of manufacturing a semiconductor device includes sequentially disposing a hard mask layer, an organic layer, and a metal-containing photoresist layer on a substrate, patterning the metal-containing photoresist layer to form a first mask pattern exposing a first region of the organic layer, implanting ions into the first region of the organic layer exposed by the first mask pattern, removing the first mask pattern and a second region of the organic layer that is not ion-implanted to form a second mask pattern exposing a partial region of the hard mask layer, and removing the partial region of the hard mask layer exposed by the second mask pattern to form a third mask pattern.
