18370913. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Jeongyong Sung of Suwon-si (KR)
Sunghee Chung of Suwon-si (KR)
Jeehoon Han of Hwaseong-si (KR)
SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18370913 titled 'SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes the following components:
- Pattern structure: This is the base structure of the device.
- Stack structure: It consists of gate layers stacked in a first region on the pattern structure and extending into a second region.
- Memory vertical structure: It penetrates the stack structure in the first region.
- Gate contact plugs: These are electrically connected to the gate layers in the second region.
- First peripheral contact plug: It is spaced apart from the gate layers.
- First gate layer: It is a part of the gate layers.
- First gate contact plug: It is electrically connected to the first gate layer.
- Side surfaces of the first gate contact plug and the first peripheral contact plug: They have different numbers of upper bending portions.
- The number of upper bending portions of the side surface of the first gate contact plug is greater than the number of upper bending portions of the side surface of the first peripheral contact plug.
Potential applications of this technology:
- This semiconductor device can be used in various electronic devices such as computers, smartphones, and tablets.
- It can be utilized in memory devices, processors, and other integrated circuits.
Problems solved by this technology:
- The design of the gate contact plugs and peripheral contact plugs allows for improved electrical connections and reduced signal loss.
- The different numbers of upper bending portions on the side surfaces help optimize the performance and reliability of the device.
Benefits of this technology:
- Enhanced electrical connectivity between the gate layers and the gate contact plugs.
- Improved signal transmission and reduced signal loss.
- Increased performance and reliability of the semiconductor device.
Original Abstract Submitted
A semiconductor device includes a pattern structure; a stack structure including gate layers stacked in a first region on the pattern structure and extending into a second region; a memory vertical structure penetrating the stack structure in the first region; gate contact plugs electrically connected to the gate layers in the second region; and a first peripheral contact plug spaced apart from the gate layers, the gate layers including a first gate layer, the gate contact plugs including a first gate contact plug electrically connected to the first gate layer, side surfaces of the first gate contact plug and the first peripheral contact plug having different numbers of upper bending portions, and the number of upper bending portions of the side surface of the first gate contact plug being greater than the number of upper bending portions of the side surface of the first peripheral contact plug.
