18370268. SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Dong Hyeon Na of Suwon-si (KR)
Myeong Soo Shin of Suwon-si (KR)
Woong Jin Cheon of Suwon-si (KR)
Kyung-Sun Kim of Suwon-si (KR)
Seung Bo Shim of Suwon-si (KR)
SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18370268 titled 'SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The substrate processing method involves loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber, and processing the substrate with the plasma. The first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, with the first level during the first section and a second level different from the first level during the second section.
- Loading substrate onto substrate support
- Forming plasma inside chamber
- Providing DC pulse signal to electromagnet
- Processing substrate with plasma
- DC pulse signal repeated at first period with different levels
Potential Applications
This technology could be applied in semiconductor manufacturing, thin film deposition, and surface modification processes.
Problems Solved
This innovation helps in achieving more precise control over the plasma processing of substrates, leading to improved quality and efficiency in various manufacturing processes.
Benefits
The method allows for enhanced uniformity and consistency in plasma processing, leading to better overall product quality and performance.
Potential Commercial Applications
This technology could be utilized in industries such as electronics, optics, and materials science for the production of advanced devices and components.
Possible Prior Art
One possible prior art could be the use of different pulse signals in plasma processing systems to control the properties of the plasma and its interaction with substrates.
Unanswered Questions
How does the first level of the DC pulse signal affect the plasma processing compared to the second level?
The abstract does not provide specific details on the impact of the different levels of the DC pulse signal on the plasma processing of the substrate.
What are the specific parameters of the first period and sections in the DC pulse signal?
The abstract does not mention the exact values or ranges of the first period, first section, and second section in the DC pulse signal.
Original Abstract Submitted
A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.
