18369957. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
JHEN-YU Tsai of KAOHSIUNG CITY (TW)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18369957 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a gate structure with a lower gate electrode, an upper gate electrode, and a silicide layer contacting the upper gate electrode.
- The semiconductor device has a trench in the substrate where the gate structure is located.
- The gate structure consists of a lower gate electrode, an upper gate electrode, and a silicide layer.
- The silicide layer makes contact with the upper gate electrode.
Potential Applications
This technology could be applied in:
- Integrated circuits
- Microprocessors
- Memory devices
Problems Solved
This technology helps in:
- Improving performance of semiconductor devices
- Enhancing conductivity in gate structures
Benefits
The benefits of this technology include:
- Increased efficiency in semiconductor devices
- Enhanced reliability of gate structures
Potential Commercial Applications
Title: Semiconductor Device with Advanced Gate Structure for Enhanced Performance This technology could be utilized in:
- Electronics industry
- Semiconductor manufacturing companies
Possible Prior Art
There is prior art related to gate structures in semiconductor devices, but specific details about the combination of a lower gate electrode, an upper gate electrode, and a silicide layer may need further investigation.
Unanswered Questions
How does the silicide layer impact the overall performance of the semiconductor device?
The article does not delve into the specific effects of the silicide layer on the device's performance.
Are there any limitations or drawbacks associated with this advanced gate structure technology?
The potential limitations or drawbacks of implementing this technology are not discussed in the article.
Original Abstract Submitted
A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The gate structure includes a lower gate electrode, an upper gate electrode disposed over the lower gate electrode, and a silicide layer contacting the upper gate electrode.
