18368461. THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE simplified abstract (Samsung Display Co., Ltd.)
Contents
- 1 THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE
Organization Name
Inventor(s)
So Young Koo of Yongin-si (KR)
Myoung Hwa Kim of Yongin-si (KR)
Hyung Jun Kim of Yongin-si (KR)
THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18368461 titled 'THIN FILM TRANSISTOR, AND TRANSISTOR ARRAY SUBSTRATE
Simplified Explanation
The abstract describes a thin film transistor with specific features such as an active layer, gate insulating layer, through holes, gate electrode, and electrodes.
- The thin film transistor includes a substrate, active layer, gate insulating layer, through holes, gate electrode, and electrodes.
- The first electrode is parallel to the first through hole and includes protrusion parts and a concavely recessed groove part.
- The second electrode is electrically connected to the second conductive area.
Potential Applications
The technology described in this patent application could be applied in the manufacturing of electronic devices such as displays, sensors, and integrated circuits.
Problems Solved
This technology solves the problem of improving the performance and efficiency of thin film transistors by optimizing the design and structure of the components.
Benefits
The benefits of this technology include enhanced functionality, increased reliability, and potentially lower production costs for electronic devices utilizing thin film transistors.
Potential Commercial Applications
- Optimized Thin Film Transistors for Advanced Displays and Sensors
Possible Prior Art
There may be prior art related to thin film transistors and their design and structure, but specific examples are not provided in this patent application.
Unanswered Questions
How does this technology compare to existing thin film transistor designs in terms of performance and efficiency?
This article does not provide a direct comparison with existing thin film transistor designs to evaluate the performance and efficiency improvements.
What specific electronic devices or industries could benefit the most from this technology?
The article does not specify which electronic devices or industries could benefit the most from the technology described in the patent application.
Original Abstract Submitted
A thin film transistor includes a substrate; an active layer including a channel area, a first conductive area, and a second conductive area; a gate insulating layer on a portion of the active layer; a first through hole penetrating through a portion of the first conductive area; a second through hole penetrating through a portion of the second conductive area; a gate electrode overlapping the channel area of the active layer; a first electrode electrically connected to the first conductive area; and a second electrode electrically connected to the second conductive area. One side of the first electrode adjacent to the first through hole is parallel to the one side of the first through hole, the first electrode including protrusion parts at both ends thereof and a groove part concavely recessed from the gate electrode.
