18368422. SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD
Organization Name
Inventor(s)
Jong-San Chang of Suwon-si (KR)
SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18368422 titled 'SEMICONDUCTOR PROCESS SYSTEM AND GAS TREATMENT METHOD
Simplified Explanation
The gas treatment method described in the patent application involves treating exhaust gas from a semiconductor process chamber using a gas treatment system, which includes operating a thermal oxidizer and a plasma processing apparatus. The method also includes stopping the operation of the thermal oxidizer for maintenance and using the plasma processing apparatus to treat the exhaust gas during this time.
- Operating a first thermal oxidizer to treat the exhaust gas discharged from the semiconductor process chamber
- Allowing the treated exhaust gas to pass through a plasma processing apparatus connected to the first thermal oxidizer
- Stopping the operation of the first thermal oxidizer to perform maintenance on it
- Performing maintenance on the first thermal oxidizer
- Operating the plasma processing apparatus to treat the exhaust gas discharged from the semiconductor process chamber
Potential Applications
The technology can be applied in semiconductor manufacturing processes, where the treatment of exhaust gases is crucial for environmental and safety reasons.
Problems Solved
This method helps in efficiently treating exhaust gases from semiconductor processes while ensuring continuous operation by switching between the thermal oxidizer and the plasma processing apparatus during maintenance.
Benefits
- Improved environmental compliance - Enhanced safety measures in semiconductor manufacturing facilities - Continuous operation with minimal downtime for maintenance
Potential Commercial Applications
The technology can be utilized in semiconductor fabrication plants, environmental engineering firms, and gas treatment system manufacturers.
Possible Prior Art
One possible prior art could be the use of thermal oxidizers and plasma processing apparatus separately for treating exhaust gases in various industrial processes.
Unanswered Questions
How does the efficiency of the gas treatment system compare to traditional methods?
The article does not provide specific data or comparisons regarding the efficiency of the gas treatment system in relation to traditional methods.
Are there any limitations or drawbacks to using this gas treatment method?
The article does not mention any potential limitations or drawbacks associated with the described gas treatment method.
Original Abstract Submitted
A gas treatment method, including: treating an exhaust gas discharged from a semiconductor process chamber using a gas treatment system; and discharging the treated exhaust gas, wherein the treating of the exhaust gas includes: operating a first thermal oxidizer to treat the exhaust gas discharged from the semiconductor process chamber, the first thermal oxidizer being connected to the semiconductor process chamber and allowing the treated exhaust gas to pass through a plasma processing apparatus connected to the first thermal oxidizer; stopping the operation of the first thermal oxidizer to perform maintenance on the first thermal oxidizer; and wherein the stopping the operation of the first thermal oxidizer comprises: performing maintenance on the first thermal oxidizer; and operating the plasma processing apparatus to treat the exhaust gas discharged from the semiconductor process chamber
