18368067. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kyunghwan Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18368067 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract consists of a substrate with multiple horizontal structures stacked on it, each containing a first conductive layer, a ferroelectric layer, and a second conductive layer. Additionally, there are vertical structures that penetrate through the horizontal structures, each including a vertical source line, a vertical bit line, a channel layer, and a dielectric layer.
- The semiconductor device includes horizontal and vertical structures for improved performance and functionality.
- Each horizontal structure consists of a first conductive layer, a ferroelectric layer, and a second conductive layer.
- Each vertical structure includes a vertical source line, a vertical bit line, a channel layer, and a dielectric layer.
Potential Applications
This technology could be applied in:
- Memory devices
- Logic circuits
- Sensor devices
Problems Solved
This technology addresses issues such as:
- Improved performance and functionality
- Enhanced data storage capabilities
- Increased efficiency in semiconductor devices
Benefits
The benefits of this technology include:
- Higher data storage capacity
- Faster data processing speeds
- Enhanced overall device performance
Potential Commercial Applications
This technology could be utilized in:
- Consumer electronics
- Automotive systems
- Industrial automation
Possible Prior Art
One possible prior art for this technology could be the use of ferroelectric materials in memory devices for improved data retention and energy efficiency.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices to evaluate its performance and efficiency in relation to current technologies.
What are the potential challenges in scaling up this technology for mass production?
The article does not address the potential challenges that may arise in scaling up this technology for mass production, such as manufacturing costs or production scalability.
Original Abstract Submitted
A semiconductor device includes a substrate. A plurality of horizontal structures is stacked on the substrate and spaced apart from each other. A plurality of vertical structures penetrates through the plurality of horizontal structures. Each of the plurality of vertical structures includes a vertical source line, a vertical bit line, a channel layer, and a dielectric layer. The channel layer is in direct contact with the vertical source line and the vertical bit line. The dielectric layer is disposed between the plurality of horizontal structures and the channel layer. Each of the plurality of horizontal structures includes a first conductive layer, a ferroelectric layer surrounding at least a portion of the first conductive layer, and a second conductive layer disposed between the ferroelectric layer and the dielectric layer.
