18364802. SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Yeongseon Kim of Suwon-si (KR)
Seonkyung Seo of Suwon-si (KR)
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18364802 titled 'SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
- A semiconductor package consists of two semiconductor chips bonded together with a bonding structure.
- The bonding structure includes a first bonding pad, a first bonding insulating layer, a second bonding pad in contact with the first bonding pad, and a second bonding insulating layer in contact with the first bonding insulating layer.
- The first bonding pad contains a first pad metal layer and a first conductive barrier layer surrounding the first pad metal layer, with a horizontal extension portion extending on an edge of the upper surface of the first pad metal layer.
Potential Applications
- Integrated circuits
- Electronic devices
- Semiconductor manufacturing
Problems Solved
- Improved bonding structure between semiconductor chips
- Enhanced electrical connectivity
- Increased reliability of semiconductor packages
Benefits
- Higher performance of semiconductor devices
- Better thermal management
- Increased durability and longevity of semiconductor packages
Original Abstract Submitted
A semiconductor package includes a first semiconductor chip including a first semiconductor device, a second semiconductor chip including a second semiconductor device, and a bonding structure between the first and second semiconductor chips, the bonding structure including a first bonding pad, a first bonding insulating layer, a second bonding pad in contact with the first bonding pad, and a second bonding insulating layer in contact with the first bonding insulating layer. The first bonding pad may include a first pad metal layer and a first conductive barrier layer surrounding the first pad metal layer, and the first conductive barrier layer may include a horizontal extension portion extending on an edge of an upper surface of the first pad metal layer.
