18362736. LOW VOLTAGE MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
LOW VOLTAGE MEMORY DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Mahmut Sinangil of Hsinchu (TW)
Jonathan Tsung-Yung Chang of Hsinchu (TW)
LOW VOLTAGE MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18362736 titled 'LOW VOLTAGE MEMORY DEVICE
Simplified Explanation
The abstract describes a twelve-transistor (12T) memory cell for a memory device, consisting of a transmission gate, a cross-coupled inverter circuit connected to the transmission gate, and a tri-state inverter connected to the cross-coupled inverter circuit. The cross-coupled inverter includes another tri-state inverter cross-coupled to an inverter circuit.
- The memory cell has 12 transistors.
- It includes a transmission gate, a cross-coupled inverter circuit, and a tri-state inverter.
- The cross-coupled inverter circuit includes another tri-state inverter cross-coupled to an inverter circuit.
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- Potential Applications
- Memory devices
- Integrated circuits
- Computer systems
- Problems Solved
- Efficient memory cell design
- Improved performance in memory devices
- Reduced power consumption
- Benefits
- Higher memory cell density
- Faster operation speeds
- Lower power consumption compared to traditional memory cell designs
Original Abstract Submitted
A twelve-transistor (12T) memory cell for a memory device that includes a transmission gate, a cross-coupled inverter circuit operably connected to the transmission gate, and a tri-state inverter operably connected to the cross-coupled inverter circuit. The cross-coupled inverter includes another tri-state inverter cross-coupled to an inverter circuit. Various operations for the 12T memory cell, as well as circuitry to perform the operations, are disclosed.
