18360711. SEMICONDUCTOR STORAGE DEVICE simplified abstract (Kioxia Corporation)
Contents
SEMICONDUCTOR STORAGE DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR STORAGE DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18360711 titled 'SEMICONDUCTOR STORAGE DEVICE
Simplified Explanation
The patent application describes a semiconductor storage device with a unique structure involving multiple chips, memory cell arrays, wiring layers, memory pillars, connection pads, contacts, insulator layers, and stress members.
- The semiconductor storage device includes a first chip with a substrate and a second chip.
- The second chip contains a memory cell array with wiring layers spaced apart from each other in a first direction.
- A memory pillar penetrates the wiring layers in the first direction.
- Connection pads are located in a boundary between the first and second chips.
- Contacts extend in the first direction from the connection pads.
- An insulator layer surrounds the contacts in a plane parallel to the substrate.
- A first member is adjacent to the insulator layer in the plane.
- The insulator layer separates the first member from the first contacts, and the first member has a stress value different from a stress value of the first insulator layer.
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- Potential Applications of this Technology
- Data storage devices
- Mobile devices
- Wearable technology
- Problems Solved by this Technology
- Efficient data storage
- Improved device performance
- Enhanced durability
- Benefits of this Technology
- Higher storage capacity
- Faster data access
- Increased device lifespan
- Potential Commercial Applications of this Technology
- Optimizing Semiconductor Storage Devices for Enhanced Performance
- Potential Commercial Applications of this Technology
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- Possible Prior Art
There may be prior art related to semiconductor storage devices with unique chip structures and memory cell arrays. Research in the field of semiconductor technology and memory storage devices may reveal similar innovations.
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- Unanswered Questions
- How does this semiconductor storage device compare to existing storage technologies in terms of speed and capacity?
The patent application provides detailed information about the structure of the semiconductor storage device, but it does not directly compare its performance metrics to existing storage technologies.
- What are the potential challenges in manufacturing this semiconductor storage device at scale?
While the patent application describes the structure of the semiconductor storage device, it does not address the potential manufacturing challenges that may arise when producing these devices in large quantities.
Original Abstract Submitted
According to one embodiment, a semiconductor storage device includes a first chip with a substrate and a second chip. The second chip has a memory cell array with wiring layers spaced apart from each other in a first direction and a memory pillar that penetrates the wiring layers in the first direction. Connection pads are in a boundary between the first and second chips. Contacts extend in the first direction from the connection pads. An insulator layer surrounds the contacts in a plane parallel to the substrate. A first member is adjacent to the insulator layer in the plane. The insulator layer separates the first member from the first contacts, and the first member has a stress value different from a stress value of the first insulator layer.
