18355578. METHOD OF INSPECTING A PIXEL simplified abstract (Samsung Display Co., Ltd.)
Contents
- 1 METHOD OF INSPECTING A PIXEL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF INSPECTING A PIXEL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this method compare to traditional pixel inspection techniques in terms of accuracy and efficiency?
- 1.11 Are there any limitations to the types of defects that can be detected using this method?
- 1.12 Original Abstract Submitted
METHOD OF INSPECTING A PIXEL
Organization Name
Inventor(s)
METHOD OF INSPECTING A PIXEL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18355578 titled 'METHOD OF INSPECTING A PIXEL
Simplified Explanation
The abstract describes a method of inspecting a pixel by measuring drain currents of a transistor in a test pattern at different gate voltages and intervals, generating graphs based on the measurements, and determining defects based on the graphs.
- Measuring drain currents at different gate voltages and intervals:
- The method involves applying different gate voltages and voltage intervals to the gate terminal of a transistor in a test pattern. - This allows for the measurement of drain currents under varying conditions, providing valuable data for analysis.
- Generating gate voltage-drain current graphs:
- Based on the measured drain currents, the method generates graphs showing the relationship between gate voltage and drain current. - These graphs help visualize the behavior of the transistor under different operating conditions, aiding in defect detection.
- Determining defects based on the graphs:
- By analyzing the first and second gate voltage-drain current graphs, defects in the transistor can be identified. - Discrepancies or abnormalities in the graphs may indicate potential issues with the pixel or transistor.
Potential Applications
This technology could be applied in the semiconductor industry for quality control and defect detection in pixel components of electronic devices.
Problems Solved
This method helps in identifying defects in pixels or transistors, ensuring the quality and reliability of electronic devices.
Benefits
- Improved quality control in semiconductor manufacturing. - Early detection of defects leads to cost savings and enhanced product reliability.
Potential Commercial Applications
"Pixel Inspection Method for Semiconductor Manufacturing: Improving Quality Control and Reliability"
Possible Prior Art
There may be prior art related to transistor testing methods in semiconductor manufacturing, but specific examples are not provided in the abstract.
Unanswered Questions
How does this method compare to traditional pixel inspection techniques in terms of accuracy and efficiency?
The article does not provide a direct comparison between this method and traditional pixel inspection techniques. It would be interesting to know if this method offers any advantages over existing methods in terms of accuracy and efficiency.
Are there any limitations to the types of defects that can be detected using this method?
The abstract does not mention the specific types of defects that can be detected using this method. It would be important to understand if there are any limitations to the scope of defects that can be identified through this technique.
Original Abstract Submitted
A method of inspecting a pixel includes measuring a first drain current by applying a first gate voltage with a first voltage interval to a gate terminal of a transistor included in a test pattern in a first voltage period, generating a first gate voltage-drain current graph based on the first drain current, measuring a second drain current by applying a second gate voltage which is lower than the first gate voltage with a second voltage interval which is different from the first voltage interval to the gate terminal of the transistor in a second voltage period which is different from the first voltage period, generating a second gate voltage-drain current graph based on the second drain current, and determining a defect of the transistor based on the first gate voltage-drain current graph and the second gate voltage-drain current graph.
