18355429. METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Jaehyung Park of Suwon-si (KR)
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18355429 titled 'METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
Simplified Explanation
The abstract describes a method of manufacturing a semiconductor device. Here is a simplified explanation of the patent application:
- Word lines are formed in word line trenches on a substrate.
- A portion of the substrate located between a pair of word lines is removed to create a direct contact hole.
- A sacrificial liner structure is formed on the inner wall of the direct contact hole, consisting of a first liner, a sacrificial layer, and a second liner.
- A preliminary direct contact is formed in the direct contact hole.
- The sacrificial layer is removed, leaving the first and second liners and creating an air space between them.
- A bit line stack is formed, covering the upper surface of the air space on the preliminary direct contact.
- The bit line stack is patterned to form bit lines.
- Side portions of the second liner and the preliminary direct contact in the direct contact hole are removed to form a direct contact.
Potential applications of this technology:
- Manufacturing of semiconductor devices, such as integrated circuits.
- Improving the performance and efficiency of semiconductor devices.
Problems solved by this technology:
- Formation of direct contacts between different layers in a semiconductor device.
- Reduction of parasitic capacitance and resistance in the direct contact.
Benefits of this technology:
- Enhanced electrical connectivity between different layers in a semiconductor device.
- Improved performance and reliability of the semiconductor device.
- Reduction of power consumption and heat generation.
Original Abstract Submitted
A method of manufacturing a semiconductor device may include forming word lines in word line trenches on a substrate, removing a portion of the substrate located between a pair of the word lines to form a direct contact hole, forming on an inner wall of the direct contact hole a sacrificial liner structure that includes a first liner, a sacrificial layer, and a second liner, forming a preliminary direct contact in the direct contact hole, removing the sacrificial layer, while leaving the first and second liners, to form an air space between the first and second liners, forming a bit line stack that covers an upper surface the air space on the preliminary direct contact, patterning the bit line stack to form bit lines, and removing side portions of the second liner and the preliminary direct contact in the direct contact hole to form a direct contact.
