18354220. SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
Contents
- 1 SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
Organization Name
Inventor(s)
Tadashi Takasaki of Toyama-shi (JP)
Atsushi Moriya of Toyama-shi (JP)
Kaoru Yamamoto of Toyama-shi (JP)
Naofumi Ohashi of Toyama-shi (JP)
SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18354220 titled 'SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
Simplified Explanation
The technique described in the patent application involves a chamber setup with a process chamber capable of processing a substrate, a shower head positioned upstream of the process chamber, a gas supplier for supplying gas into the process chamber via the shower head, exhaust pipes, exhaust controllers, heaters, and a controller for gas supply control.
- The process chamber is capable of processing a substrate.
- The shower head is positioned upstream of the process chamber.
- The gas supplier supplies gas into the process chamber via the shower head.
- The first exhaust pipe communicates with the shower head.
- The second exhaust pipe communicates with the process chamber.
- The first exhaust controller and heater are installed in the first exhaust pipe.
- The controller is capable of controlling the gas supplier to supply processing gas or non-processing gas to the shower head.
Potential Applications
This technology can be applied in semiconductor manufacturing processes, such as etching and deposition, where precise control of gas supply is crucial for achieving desired results.
Problems Solved
This technology solves the problem of efficiently controlling gas supply in a chamber setup to ensure proper processing of substrates without contamination or undesired reactions.
Benefits
The benefits of this technology include improved process control, enhanced substrate processing quality, reduced contamination risks, and increased efficiency in semiconductor manufacturing processes.
Potential Commercial Applications
Potential commercial applications of this technology include semiconductor fabrication facilities, research institutions, and companies involved in advanced manufacturing processes.
Possible Prior Art
One possible prior art for this technology could be similar gas supply control systems used in semiconductor manufacturing equipment from other companies.
Unanswered Questions
How does this technology compare to existing gas supply control systems in terms of efficiency and accuracy?
This article does not provide a direct comparison with existing gas supply control systems in terms of efficiency and accuracy.
What are the potential limitations or drawbacks of implementing this technology in semiconductor manufacturing processes?
This article does not address the potential limitations or drawbacks of implementing this technology in semiconductor manufacturing processes.
Original Abstract Submitted
A technique includes at least one chamber including a process chamber that is capable of processing a substrate and a shower head arranged in an upstream of the process chamber; a gas supplier that is capable of supplying a gas into the process chamber via the shower head; a first exhaust pipe communicating with the shower head; a second exhaust pipe communicating with the process chamber; a first exhaust controller installed in the first exhaust pipe; a first heater installed in the first exhaust pipe; and a controller configured to be capable of: (a) controlling the gas supplier so as to supply a processing gas as the gas to the shower head, and (b) controlling the gas supplier so as to supply a non-processing gas as the gas to the shower head.
