18352838. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Mitsubishi Electric Corporation)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Mitsubishi Electric Corporation
Inventor(s)
Kosuke Sakaguchi of Tokyo (JP)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18352838 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a structure in which active trenches in an IGBT region and capacitance adjustment trenches in a diode region are provided in a stripe shape, with crossing trenches connecting them electrically.
- Active trenches and capacitance adjustment trenches are provided in a stripe shape in a Y direction.
- Crossing trenches extend in an X direction orthogonal to the Y direction, connecting the adjacent active and capacitance adjustment trenches.
- The gate electrode of the active trench and the capacitance adjustment electrode of the capacitance adjustment trench are electrically connected via the electrode in the crossing trench.
Potential Applications
This technology could be applied in power electronics, specifically in the design and manufacturing of IGBT and diode devices for various applications such as electric vehicles, renewable energy systems, and industrial motor drives.
Problems Solved
1. Improved electrical connection between active and capacitance adjustment trenches. 2. Enhanced performance and efficiency of IGBT and diode devices.
Benefits
1. Increased reliability and stability of power electronic devices. 2. Higher efficiency and power density. 3. Simplified manufacturing process.
Potential Commercial Applications
Optimizing IGBT and diode devices for electric vehicles SEO optimized title: "Commercial Applications of Active and Capacitance Adjustment Trenches in Power Electronics"
Possible Prior Art
Prior art in the field of power electronics and semiconductor device manufacturing may include similar structures and techniques for improving the performance of IGBT and diode devices.
Unanswered Questions
How does this technology compare to existing solutions in terms of performance and cost?
This article does not provide a direct comparison with existing solutions in terms of performance and cost. Further research and testing would be needed to evaluate the technology's competitiveness in the market.
What are the potential challenges in implementing this technology on a large scale?
The article does not address the potential challenges in implementing this technology on a large scale, such as scalability, manufacturing complexity, and compatibility with existing production processes. Additional studies and pilot projects may be required to assess these challenges.
Original Abstract Submitted
An adjacent active trench in an IGBT region and an adjacent capacitance adjustment trench in a diode region are each provided in a stripe shape extending in a Y direction in a plan view. Each of a plurality of crossing trenches extends in an X direction orthogonal to the Y direction in a plan view and is provided in a stripe shape. Each of the plurality of crossing trenches is provided from the adjacent capacitance adjustment trench to the adjacent active trench in a plan view. Therefore, the gate electrode of the adjacent active trench and the capacitance adjustment electrode of the adjacent capacitance adjustment trench are electrically connected via the electrode for the crossing trench in the crossing trench.
