18351407. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Bong Yong Lee of Suwon-si (KR)

Yong Seok Kim of Suwon-si (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18351407 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The abstract describes a semiconductor device that includes a substrate with a cell region and an extension region. Insulating layers are stacked on the substrate, and a conductive line is disposed on one sidewall of the second insulating layer. A conductive pillar extends through the first insulating layer, and a semiconductor layer is disposed on one sidewall of the conductive pillar. A ferroelectric layer is placed between the conductive line and the semiconductor layer.

• The device includes a substrate with a cell region and an extension region.
• Insulating layers are stacked on the substrate in alternating fashion.
• A conductive line is located on one sidewall of the second insulating layer.
• A conductive pillar extends through the first insulating layer.
• A semiconductor layer is placed on one sidewall of the conductive pillar.
• A ferroelectric layer is positioned between the conductive line and the semiconductor layer.

Potential applications of this technology:

• Memory devices: The ferroelectric layer can be used to store data, making this technology suitable for memory applications.
• Integrated circuits: The semiconductor device can be integrated into circuits for various electronic applications.

Problems solved by this technology:

• Data storage: The ferroelectric layer provides a reliable and efficient means of storing data.
• Integration: The semiconductor device allows for easy integration into existing circuits.

Benefits of this technology:

• Improved data storage: The ferroelectric layer offers enhanced data storage capabilities.
• Compact design: The semiconductor device's structure allows for a compact and efficient design.
• Integration flexibility: The device can be easily integrated into different electronic systems.

Original Abstract Submitted

A semiconductor device comprises a substrate that extends in first and second directions and includes a cell region and an extension region that extends from the cell region in the first direction, first and second insulating layers alternately stacked on the substrate in a third direction, a conductive line disposed on one sidewall of the second insulating layer in the second direction, a conductive pillar that extends in the third direction and penetrates through the first insulating layer, a semiconductor layer disposed on one sidewall of the conductive pillar and that extends in the third direction, and a ferroelectric layer disposed between the conductive line and the semiconductor layer and that extends in the third direction. The conductive line includes first and second conductive patterns spaced apart from each other in the second direction, and the second insulating layer is disposed between the first and second conductive patterns.