18348864. INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18348864 titled 'INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The abstract of the patent application describes a method of manufacturing an integrated circuit device. The method involves several steps including the formation of lower electrodes above a substrate, the formation of a dielectric film on the lower electrodes, the formation of a doped upper interface film on the dielectric film, and the formation of an upper electrode on the doped upper interface film. The doped upper interface film contains a dopant, which can be selected from tin (Sn), molybdenum (Mo), niobium (Nb), tantalum (Ta), and aluminum (Al).
- The method involves forming lower electrodes on a substrate.
- A dielectric film is then formed on the lower electrodes.
- A doped upper interface film is formed on the dielectric film.
- The doped upper interface film contains a dopant selected from tin (Sn), molybdenum (Mo), niobium (Nb), tantalum (Ta), and aluminum (Al).
- An upper electrode is formed on the doped upper interface film.
Potential applications of this technology:
- Manufacturing of integrated circuit devices.
- Semiconductor industry.
- Electronics manufacturing.
Problems solved by this technology:
- Improved performance and functionality of integrated circuit devices.
- Enhanced electrical properties of the device.
- Increased reliability and stability of the device.
Benefits of this technology:
- Higher efficiency and performance of integrated circuit devices.
- Improved electrical conductivity.
- Enhanced reliability and stability.
- Compatibility with various dopant materials.
Original Abstract Submitted
A method of manufacturing an integrated circuit device includes forming a plurality of lower electrodes above a substrate, forming a dielectric film on the plurality of lower electrodes, forming a doped upper interface film on the dielectric film, and forming an upper electrode on the doped upper interface film, wherein the doped upper interface film includes a dopant, and the dopant includes one selected from tin (Sn), molybdenum (Mo), niobium (Nb), tantalum (Ta), and aluminum (Al).
