18347927. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Jin-Seong Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18347927 titled 'SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application includes a unique structure involving a trench, cell gate insulating layer, cell gate electrode, work function control pattern, and cell gate capping pattern. The work function control pattern contains N-type impurities and a semiconductor material, with varying concentrations of impurities in different regions.
- Explanation of the patent:
- The semiconductor memory device has a trench structure between source/drain regions. - The work function control pattern on the cell gate electrode includes N-type impurities. - The concentration of impurities in different regions of the work function control pattern varies.
- Potential applications of this technology:
- Improved performance and reliability of semiconductor memory devices. - Enhanced data storage capabilities in electronic devices.
- Problems solved by this technology:
- Controlling the work function in memory devices. - Enhancing the efficiency of data storage and retrieval processes.
- Benefits of this technology:
- Increased speed and efficiency of semiconductor memory devices. - Enhanced data retention and reliability. - Potential for higher memory capacity in electronic devices.
- Potential commercial applications of this technology:
- Memory chips for smartphones, tablets, and other electronic devices. - Data storage solutions for servers and data centers.
- Possible prior art:
- Previous patents or research on work function control in semiconductor devices. - Studies on memory device structures and materials.
- Unanswered Questions:
- 1. How does the concentration of N-type impurities affect the performance of the semiconductor memory device?
- Unanswered Questions:
The patent application mentions varying concentrations of N-type impurities in different regions of the work function control pattern, but it does not specify the exact impact on device performance.
- 2. Are there any limitations to the use of a semiconductor material in the work function control pattern?
While the patent application describes the use of a semiconductor material in the work function control pattern, it does not address any potential drawbacks or limitations associated with this choice of material.
Original Abstract Submitted
A semiconductor memory device comprises a substrate including a first source/drain region and a second source/drain region, a trench between the first source/drain region and the second source/drain region and formed in the substrate, a cell gate insulating layer on sidewalls and a bottom surface of the trench, a cell gate electrode on the cell gate insulating layer, a work function control pattern on the cell gate electrode, including N-type impurities and a cell gate capping pattern on the work function control pattern. The work function control pattern includes a semiconductor material. The work function control pattern includes a first region and a second region between the first region and the cell gate electrode. A concentration of the N-type impurities in the first region is greater than a concentration of the N-type impurities in the second region.
