18345429. IMAGE SENSOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
IMAGE SENSOR
Organization Name
Inventor(s)
HAEWOOK Jeong of SUWON-SI (KR)
IMAGE SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18345429 titled 'IMAGE SENSOR
Simplified Explanation
The abstract describes an image sensor that includes multiple layers and regions arranged on a substrate. It specifically mentions a first substrate layer, a thicker second substrate layer, and an inter-substrate insulating layer between them. It also mentions impurity regions and a photodiode region on the second substrate layer, as well as a transfer transistor with a gate electrode layer that penetrates the substrate layers and extends to the second substrate layer.
- The image sensor includes multiple substrate layers and regions arranged on them.
- The first substrate layer is thinner than the second substrate layer.
- An inter-substrate insulating layer is placed between the first and second substrate layers.
- There are impurity regions and a photodiode region on the second substrate layer.
- The transfer transistor has a gate electrode layer that penetrates the substrate layers and extends to the second substrate layer.
- A floating diffusion region is connected to the transfer transistor and arranged on the side of the first substrate layer.
Potential applications of this technology:
- Digital cameras
- Mobile phones
- Surveillance cameras
- Medical imaging devices
Problems solved by this technology:
- Improved image sensing capabilities
- Enhanced sensitivity to light
- Reduction of noise and interference
Benefits of this technology:
- Higher quality images
- Improved low-light performance
- Increased signal-to-noise ratio
- More efficient image capture
Original Abstract Submitted
An image sensor includes a first substrate layer, a second substrate layer that is thicker than the first substrate layer, an inter-substrate insulating layer arranged between the first substrate layer and the second substrate layer, a first impurity region, a pair of second impurity regions, and a third impurity region, which are spaced apart from each other and arranged on some portions of the first substrate layer. The image sensor further includes a photodiode region constituting a photo sensing device arranged on the second substrate layer, a transfer transistor including a first gate electrode layer that fills a gate hole, penetrates the first substrate layer and the inter-substrate insulating layer, and extends to the second substrate layer, and a floating diffusion region arranged on a side of the first substrate layer and connected to the transfer transistor.
