18339567. METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SEIKO EPSON CORPORATION)
Contents
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Koichi Mizugaki of Suwa-shi (JP)
Tomoyuki Kamakura of Matsumoto-shi (JP)
Yasuke Matsuzawa of Chino-shi (JP)
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18339567 titled 'METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a method for manufacturing a semiconductor device. Here is a simplified explanation of the abstract:
- The method starts by creating a hole that goes through the semiconductor substrate.
- An insulating film is then formed on the surface of the substrate and the side of the hole.
- A resist is applied on the surface of the insulating film, covering the substrate surface and the side of the hole.
- The insulating film is wet-etched using the resist as a mask.
- An organic insulating film is then applied to cover the substrate surface and the side of the hole.
- Finally, a conductive film is formed on the surface of the organic insulating film.
Potential applications of this technology:
- Manufacturing of various semiconductor devices such as transistors, diodes, and integrated circuits.
- Production of high-performance electronic components used in computers, smartphones, and other electronic devices.
Problems solved by this technology:
- Provides a method for creating a through hole in a semiconductor substrate.
- Enables the formation of insulating and conductive films on the substrate surface and the side of the hole.
- Offers a simplified and efficient manufacturing process for semiconductor devices.
Benefits of this technology:
- Allows for the creation of complex semiconductor structures with improved functionality.
- Enhances the reliability and performance of semiconductor devices.
- Provides a cost-effective manufacturing method for producing high-quality semiconductor components.
Original Abstract Submitted
A method for manufacturing a semiconductor device includes: forming a first through hole penetrating from a first surface to a second surface of a semiconductor substrate; forming a second insulating film at the first surface of the semiconductor substrate and a side surface of the first through hole; disposing a resist at a surface of the second insulating film from the first surface of the semiconductor substrate to an end portion of the side surface of the first through hole on a first surface side of the semiconductor substrate; wet-etching the second insulating film by using the resist as a mask; covering the first surface of the semiconductor substrate and the side surface of the first through hole with an organic insulating film; and forming a second conductive film at a surface of the organic insulating film.
